IRFH7004T

IRFH7004TRPBF vs IRFH7004TRPBF-CUT TAPE vs IRFH7004TR2PBF.

 
PartNumberIRFH7004TRPBFIRFH7004TRPBF-CUT TAPEIRFH7004TR2PBF.
DescriptionMOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePQFN-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current259 A--
Rds On Drain Source Resistance1.1 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Qg Gate Charge129 nC--
Pd Power Dissipation156 W--
ConfigurationSingle--
TradenameStrongIRFET--
PackagingReel--
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel--
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min117 S--
Fall Time49 ns--
Product TypeMOSFET--
Rise Time51 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time73 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSP001570954--
Unit Weight0.001164 oz--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFH7004TRPBF MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC
IRFH7004TRPBF-CUT TAPE Neu und Original
IRFH7004TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0011ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Diss
IRFH7004TR2PBF. Neu und Original
Infineon Technologies
Infineon Technologies
IRFH7004TR2PBF MOSFET N CH 40V 100A PQFN5X6
IRFH7004TRPBF MOSFET N CH 40V 100A PQFN 5X6
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