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FS150R07N3E4

FS150R07N3E4
Mfr. #:
FS150R07N3E4
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules IGBT Module 150A 650V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS150R07N3E4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.95 V
Kontinuierlicher Kollektorstrom bei 25 C:
150 A
Gate-Emitter-Leckstrom:
400 nA
Pd - Verlustleistung:
430 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Teil # Aliase:
FS150R07N3E4BOSA1 SP000843726
Tags
FS150R07N, FS150R07, FS150R0, FS150R, FS150, FS15, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 650V 150A 35-pin ECONO3-4
***ineon SCT
EconoPACK™ 3 650 V, 150 A sixpack IGBT module with low sat and fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 Diode and NTC, AG-ECONO3-4, RoHS
***ineon
EconoPACK 3 650V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 Diode and NTC | Summary of Features: Increased blocking voltage capability to 650V; High Short Circuit Capability, Self Limiting Short Circuit Current; T(vj op) = 150C; Integrated NTC temperature sensor; Copper Base Plate; Solder Contact Technology; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
Teil # Mfg. Beschreibung Aktie Preis
FS150R07N3E4B11BOSA1
DISTI # FS150R07N3E4B11BOSA1-ND		Infineon Technologies AGIGBT MODULE VCES 650V 150A
RoHS: Not compliant
Min Qty: 30
Container: Bulk		Limited Supply - Call
    FS150R07N3E4BOSA1
    DISTI # FS150R07N3E4BOSA1-ND    		Infineon Technologies AGIGBT MODULE 650V 150A
    RoHS: Compliant
    Min Qty: 10
    Container: Bulk    		Temporarily Out of Stock
    • 10:$142.6430
    FS150R07N3E4
    DISTI # FS150R07N3E4    		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 35-pin ECONO3-4 - Bulk (Alt: FS150R07N3E4)
    RoHS: Not Compliant
    Min Qty: 3
    Container: Bulk    		Americas - 0
    • 3:$129.4900
    • 5:$124.7900
    • 8:$120.2900
    • 15:$116.2900
    • 30:$114.1900
    FS150R07N3E4_B11
    DISTI # FS150R07N3E4_B11    		Infineon Technologies AG- Bulk (Alt: FS150R07N3E4_B11)
    RoHS: Not Compliant
    Min Qty: 3
    Container: Bulk    		Americas - 0
    • 3:$128.6900
    • 5:$124.0900
    • 8:$119.5900
    • 15:$115.5900
    • 30:$113.4900
    FS150R07N3E4BOSA1
    DISTI # FS150R07N3E4BOSA1    		Infineon Technologies AGLOW POWER ECONO - Trays (Alt: FS150R07N3E4BOSA1)
    RoHS: Compliant
    Min Qty: 10
    Container: Tray    		Americas - 0
    • 10:$126.6900
    • 20:$125.0900
    • 40:$121.8900
    • 60:$118.8900
    • 100:$115.9900
    FS150R07N3E4B11BOSA1
    DISTI # FS150R07N3E4B11BOSA1    		Infineon Technologies AG- Bulk (Alt: FS150R07N3E4B11BOSA1)
    RoHS: Compliant
    Min Qty: 3
    Container: Bulk    		Americas - 0
    • 3:$128.6900
    • 5:$124.0900
    • 8:$119.5900
    • 15:$115.5900
    • 30:$113.4900
    FS150R07N3E4
    DISTI # 641-FS150R07N3E4    		Infineon Technologies AGIGBT Modules IGBT Module 150A 650V
    RoHS: Compliant    		13
    • 1:$147.4100
    • 5:$144.5100
    • 10:$137.7700
    • 25:$134.8800
    FS150R07N3E4_B11
    DISTI # 641-FS150R07N3E4_B11    		Infineon Technologies AGIGBT Modules IGBT Module 150A 650V
    RoHS: Compliant    		10
    • 1:$149.0500
    • 5:$146.1200
    • 10:$139.3100
    • 25:$136.3800
    FS150R07N3E4Infineon Technologies AGInsulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant    		117
    • 1000:$118.3200
    • 500:$124.5400
    • 100:$129.6600
    • 25:$135.2200
    • 1:$145.6200
    FS150R07N3E4_B11Infineon Technologies AGInsulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant    		160
    • 1000:$117.6100
    • 500:$123.8000
    • 100:$128.8800
    • 25:$134.4100
    • 1:$144.7500
    FS150R07N3E4B11BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel
    RoHS: Compliant    		37
    • 1000:$117.6100
    • 500:$123.8000
    • 100:$128.8800
    • 25:$134.4100
    • 1:$144.7500
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    Verfügbarkeit
    Aktie:
    13
    Auf Bestellung:
    1996
    Menge eingeben:
    Der aktuelle Preis von FS150R07N3E4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    147,41 $
    147,41 $
    5
    144,51 $
    722,55 $
    10
    137,77 $
    1 377,70 $
    25
    134,88 $
    3 372,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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