PartNumber | FS150R07N3E4 | FS150R07N3E4B11BOSA1 | FS150R07N3E4BOSA1 |
Description | IGBT Modules IGBT Module 150A 650V | IGBT MODULE VCES 650V 150A | IGBT MODULE 650V 150A |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.95 V | - | - |
Continuous Collector Current at 25 C | 150 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 430 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FS150R07N3E4BOSA1 SP000843726 | - | - |