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NSBA123JDXV6T5G

NSBA123JDXV6T5G
Mfr. #:
NSBA123JDXV6T5G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSBA123JDXV6T5G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA123JDXV6T5G DatasheetNSBA123JDXV6T5G Datasheet (P4-P6)NSBA123JDXV6T5G Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Dual
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
2.2 kOhms
Typisches Widerstandsverhältnis:
0.047
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
- 0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
357 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
NSBA123JDXV6
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
80
Höhe:
0.55 mm
Länge:
1.6 mm
Breite:
1.2 mm
Marke:
ON Semiconductor
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
8000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
NSBA123JDX, NSBA123JD, NSBA123J, NSBA123, NSBA12, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***ical
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***emi
Dual PNP Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 2.2K/47Kohm, Sot563; Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
NSBA123JDXV6T5G
DISTI # NSBA123JDXV6T5GOS-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 8000:$0.0696
NSBA123JDXV6T5G
DISTI # NSBA123JDXV6T5G		ON SemiconductorTrans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA123JDXV6T5G)
RoHS: Compliant
Min Qty: 16000
Container: Reel		Americas - 0
  • 16000:$0.0418
  • 32000:$0.0416
  • 48000:$0.0410
  • 80000:$0.0405
  • 160000:$0.0395
NSBA123JDXV6T5G
DISTI # 42K2306		ON SemiconductorBRT TRANSISTOR, 50V, 47K/2.2KOHM, SOT563, FULL REEL,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.047(Ratio)RoHS Compliant: Yes0
  • 1:$0.0740
NSBA123JDXV6T5G
DISTI # 49X8925		ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/47KOHM, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.047(Ratio) RoHS Compliant: Yes0
  • 1:$0.3840
  • 50:$0.2950
  • 100:$0.2010
  • 250:$0.1670
  • 500:$0.1400
  • 1000:$0.1120
  • 2500:$0.0940
  • 5000:$0.0780
NSBA123JDXV6T5G
DISTI # 863-NSBA123JDXV6T5G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
RoHS: Compliant		0
  • 1:$0.4200
  • 10:$0.2660
  • 100:$0.1140
  • 1000:$0.0880
  • 2500:$0.0670
  • 8000:$0.0590
  • 24000:$0.0560
  • 48000:$0.0490
  • 96000:$0.0480
NSBA123JDXV6T5GON Semiconductor 
RoHS: Not Compliant		83400
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
Bild Teil # Beschreibung
NSBA123TDP6T5G

Mfr.#: NSBA123TDP6T5G

OMO.#: OMO-NSBA123TDP6T5G

 Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123TF3T5G

Mfr.#: NSBA123TF3T5G

OMO.#: OMO-NSBA123TF3T5G

 Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
NSBA123JDXV6T1G

Mfr.#: NSBA123JDXV6T1G

OMO.#: OMO-NSBA123JDXV6T1G

 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EDXV6T1

Mfr.#: NSBA123EDXV6T1

OMO.#: OMO-NSBA123EDXV6T1

 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EDXV6T1G

Mfr.#: NSBA123EDXV6T1G

OMO.#: OMO-NSBA123EDXV6T1G-ON-SEMICONDUCTOR

 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123JDXV6T1

Mfr.#: NSBA123JDXV6T1

OMO.#: OMO-NSBA123JDXV6T1-ON-SEMICONDUCTOR

 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123TDP6T5G

Mfr.#: NSBA123TDP6T5G

OMO.#: OMO-NSBA123TDP6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123JDP6T5G

Mfr.#: NSBA123JDP6T5G

OMO.#: OMO-NSBA123JDP6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123JDXV6T5G

Mfr.#: NSBA123JDXV6T5G

OMO.#: OMO-NSBA123JDXV6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EF3T5G

Mfr.#: NSBA123EF3T5G

OMO.#: OMO-NSBA123EF3T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
Verfügbarkeit
Aktie:
16
Auf Bestellung:
1999
Menge eingeben:
Der aktuelle Preis von NSBA123JDXV6T5G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,41 $
0,41 $
10
0,27 $
2,66 $
100
0,11 $
11,40 $
1000
0,09 $
88,00 $
2500
0,07 $
167,50 $
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