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SI3460BDV-T1-GE3

SI3460BDV-T1-GE3
Mfr. #:
SI3460BDV-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 20V 8A 6-TSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3460BDV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3460BDV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI3460B, SI3460, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R
***ronik
N-CHANNEL-FET 8A 20V TSOP-6 RoHSconf
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; No. of Pins:6;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3460BDV-T1-GE3
DISTI # V36:1790_09216672		Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.3136
  • 1500000:$0.3138
  • 300000:$0.3265
  • 30000:$0.3469
  • 3000:$0.3502
SI3460BDV-T1-GE3
DISTI # SI3460BDV-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1720In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3460BDV-T1-GE3
DISTI # SI3460BDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1720In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3460BDV-T1-GE3
DISTI # SI3460BDV-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.3059
  • 15000:$0.3140
  • 6000:$0.3260
  • 3000:$0.3502
SI3460BDV-T1-GE3
DISTI # SI3460BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2939
  • 18000:$0.3029
  • 12000:$0.3109
  • 6000:$0.3239
  • 3000:$0.3339
SI3460BDV-T1-GE3
DISTI # 781-SI3460BDV-GE3		Vishay IntertechnologiesMOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
RoHS: Compliant		0
    SI3460BDV-T1-GE3Vishay Intertechnologies 4357
      SI3460BDV-T1-GE3Vishay IntertechnologiesMOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        SI3460BDV-T1-E3

        Mfr.#: SI3460BDV-T1-E3

        OMO.#: OMO-SI3460BDV-T1-E3

        		 MOSFET 20V 8.0A 3.5W
        SI3460BDV-T1-GE3

        Mfr.#: SI3460BDV-T1-GE3

        OMO.#: OMO-SI3460BDV-T1-GE3

        		 MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
        SI3460BDV-T1-E3

        Mfr.#: SI3460BDV-T1-E3

        OMO.#: OMO-SI3460BDV-T1-E3-VISHAY

        		 IGBT Transistors MOSFET 20V 8.0A 3.5W
        SI3460BDV-T1-E312+

        Mfr.#: SI3460BDV-T1-E312+

        OMO.#: OMO-SI3460BDV-T1-E312--1190

        		 Neu und Original
        SI3460BDV-T1-GE3

        Mfr.#: SI3460BDV-T1-GE3

        OMO.#: OMO-SI3460BDV-T1-GE3-VISHAY

        		 MOSFET N-CH 20V 8A 6-TSOP
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von SI3460BDV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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