SI3460BDV-T1-E3

SI3460BDV-T1-E3
Mfr. #:
SI3460BDV-T1-E3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 20V 8.0A 3.5W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3460BDV-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3460BDV-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI3460BDV-E3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Handelsname
TrenchFET
Paket-Koffer
SOT-23-6 Thin, TSOT-23-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
6-TSOP
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
3.5W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
860pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
8A (Tc)
Rds-On-Max-Id-Vgs
27 mOhm @ 5.1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
24nC @ 8V
Pd-Verlustleistung
2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
6 ns 5 ns
Anstiegszeit
60 ns 15 ns
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
6.7 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
27 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
25 ns
Typische-Einschaltverzögerungszeit
7 ns 5 ns
Kanal-Modus
Erweiterung
Tags
SI3460B, SI3460, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3460BDV-T1-E3
DISTI # V72:2272_09216670
Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R
RoHS: Compliant
3143
  • 3000:$0.3199
  • 1000:$0.3268
  • 500:$0.3826
  • 250:$0.4720
  • 100:$0.4772
  • 25:$0.5950
  • 10:$0.6020
  • 1:$0.7147
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
31388In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
31388In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
30000In Stock
  • 3000:$0.3669
SI3460BDV-T1-E3
DISTI # 25790201
Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R
RoHS: Compliant
3143
  • 3000:$0.3199
  • 1000:$0.3268
  • 500:$0.3826
  • 250:$0.4720
  • 100:$0.4772
  • 25:$0.5950
  • 20:$0.6020
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 24000
  • 3000:$0.3149
  • 6000:$0.3059
  • 12000:$0.2979
  • 18000:$0.2909
  • 30000:$0.2829
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3460BDV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 25
  • 1:$0.6159
  • 30:$0.5769
  • 75:$0.5009
  • 150:$0.4599
  • 375:$0.3999
  • 750:$0.3439
  • 1500:$0.3429
SI3460BDV-T1-E3Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel
RoHS: Compliant
Container: Reel
Americas - 0
    SI3460BDV-T1-E3
    DISTI # 75M5452
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 8A, TSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
    • 1:$0.9200
    • 10:$0.7340
    • 25:$0.6750
    • 50:$0.6160
    • 100:$0.5570
    • 500:$0.4600
    • 1000:$0.3680
    SI3460BDV-T1-E3
    DISTI # 85W0179
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 1:$0.3340
    • 3000:$0.3340
    SI3460BDV-T1-E3.
    DISTI # 16AC0254
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2W,No. of Pins:6Pins RoHS Compliant: No24000
    • 1:$0.3340
    • 3000:$0.3340
    SI3460BDV-T1-E3
    DISTI # 70026203
    Vishay SiliconixN-CHANNEL 20-V (D-S) MOSFET
    RoHS: Compliant
    0
    • 3000:$0.3770
    • 6000:$0.3570
    • 9000:$0.3160
    SI3460BDV-T1-E3Vishay IntertechnologiesSingle N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6
    RoHS: Compliant
    12000Reel
    • 3000:$0.5100
    SI3460BDV-T1-E3
    DISTI # 781-SI3460BDV-E3
    Vishay IntertechnologiesMOSFET 20V 8.0A 3.5W
    RoHS: Compliant
    4970
    • 1:$0.9200
    • 10:$0.7340
    • 100:$0.5570
    • 500:$0.4600
    • 1000:$0.3680
    • 3000:$0.3340
    SI3460BDV-T1-E3VISIL 221
      SI3460BDV-T1-E3Vishay IntertechnologiesMOSFET 20V 8.0A 3.5W
      RoHS: Compliant
      Americas - 3000
        SI3460BDV-T1-E3
        DISTI # C1S803601192530
        Vishay IntertechnologiesMOSFETs
        RoHS: Compliant
        3143
        • 250:$0.4720
        • 100:$0.4772
        • 25:$0.5950
        • 10:$0.6020
        Bild Teil # Beschreibung
        SI3460BDV-T1-E3

        Mfr.#: SI3460BDV-T1-E3

        OMO.#: OMO-SI3460BDV-T1-E3

        MOSFET 20V 8.0A 3.5W
        SI3460BDV-T1-GE3

        Mfr.#: SI3460BDV-T1-GE3

        OMO.#: OMO-SI3460BDV-T1-GE3

        MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
        SI3460BDV-T1-E3

        Mfr.#: SI3460BDV-T1-E3

        OMO.#: OMO-SI3460BDV-T1-E3-VISHAY

        IGBT Transistors MOSFET 20V 8.0A 3.5W
        SI3460BDV-T1-E312+

        Mfr.#: SI3460BDV-T1-E312+

        OMO.#: OMO-SI3460BDV-T1-E312--1190

        Neu und Original
        SI3460BDV-T1-GE3

        Mfr.#: SI3460BDV-T1-GE3

        OMO.#: OMO-SI3460BDV-T1-GE3-VISHAY

        MOSFET N-CH 20V 8A 6-TSOP
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von SI3460BDV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,42 $
        0,42 $
        10
        0,40 $
        4,03 $
        100
        0,38 $
        38,19 $
        500
        0,36 $
        180,35 $
        1000
        0,34 $
        339,50 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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