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IRF7809AVTRPBF

IRF7809AVTRPBF
Mfr. #:
IRF7809AVTRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 13.3A 9mOhm 41nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7809AVTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF7809AVTRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
13.3 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
41 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001555654
Gewichtseinheit:
0.019048 oz
Tags
IRF7809AVT, IRF7809AV, IRF7809A, IRF7809, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 14.5 A, 30 V, 0.007 Ohm, 4.5 V, 1 V
***ure Electronics
IRF7809AVPBF: 30 V 13.3 A 9 mOhm SMT Hexfet Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation
***itex
Transistor: N-MOSFET; unipolar; 30V; 15A; 0.0075ohm; 2.5W; -55+150 deg.C; SMD; SO8
***ure Electronics
Single N-Channel 30 V 0.0055 Ohm 37 nC HEXFET® Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 15A 8-Pin SOIC Pb free
***icontronic
Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF7463PBF N-channel MOSFET Transistor, 14 A, 30 V, 8-Pin SOIC | Infineon IRF7463PBF
***ure Electronics
Single N-Channel 30 V 8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 14A 8-Pin SOIC Tube
***SIT Distribution GmbH
Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipat
***(Formerly Allied Electronics)
IRF8714PBF N-channel MOSFET Transistor, 14 A, 30 V, 8-Pin SOIC | Infineon IRF8714PBF
***roFlash
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P
***ure Electronics
Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***ure Electronics
Single N-Channel 30 V 0.009 Ohms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R
***nsix Microsemi
Small Signal Field-Effect Transistor, 12.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
N-Channel MOSFETs 30V 12A 2.95W
***S
French Electronic Distributor since 1988
***et
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 18.2A, SOIC
***ponent Sense
MOSFET SO8S N 0.0144R 30V 13A~NH4219262
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 12.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC Tube
***icontronic
Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissi
***enic
30V 17A 9.5m´Î@10V10A 5W 2.2V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET,N CH,30V,17A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***SIT Distribution GmbH
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissip
***ure Electronics
Single N-Channel 30 V 0.0079 Ohms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 19.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.3A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***nell
MOSFET,N CH,30V,19.3A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Current Id Max: 13.6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.0085Ohm;ID 11A;SO-8;PD 2.5W;VGS +/-18V;-55
***icroelectronics
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
***ark
N CHANNEL MOSFET, 30V, 11A, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.0085ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 11A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 19mohm; On State resistance @ Vgs = 10V: 10.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 2.5W; Pulse Current Idm: 44A; Row Pitch: 6.3mm; SMD Marking: STS11NF30L; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF7809AVTRPBF
DISTI # V72:2272_17801274		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
RoHS: Compliant		870
  • 500:$0.4995
  • 250:$0.5341
  • 100:$0.5522
  • 25:$0.6722
  • 10:$0.6751
  • 1:$0.7618
IRF7809AVTRPBF
DISTI # V72:2272_13890733		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
RoHS: Compliant		677
  • 500:$0.4995
  • 250:$0.5341
  • 100:$0.5522
  • 25:$0.6722
  • 10:$0.6751
  • 1:$0.7618
IRF7809AVTRPBF
DISTI # IRF7809AVPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 13.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6557In Stock
  • 1000:$0.5141
  • 500:$0.6512
  • 100:$0.8397
  • 10:$1.0620
  • 1:$1.2000
IRF7809AVTRPBF
DISTI # IRF7809AVPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 13.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6557In Stock
  • 1000:$0.5141
  • 500:$0.6512
  • 100:$0.8397
  • 10:$1.0620
  • 1:$1.2000
IRF7809AVTRPBF
DISTI # IRF7809AVPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 13.3A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.4658
IRF7809AVTRPBF
DISTI # 30734392		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.4909
IRF7809AVTRPBF
DISTI # 30605274		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 200:$0.6796
  • 100:$0.7025
  • 50:$0.8542
  • 26:$0.9256
IRF7809AVTRPBF
DISTI # 30307024		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
RoHS: Compliant		870
  • 500:$0.4995
  • 250:$0.5341
  • 100:$0.5522
  • 25:$0.6722
  • 21:$0.6751
IRF7809AVTRPBF
DISTI # 27105165		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
RoHS: Compliant		677
  • 500:$0.4995
  • 250:$0.5341
  • 100:$0.5522
  • 25:$0.6722
  • 21:$0.6751
IRF7809AVTRPBF
DISTI # IRF7809AVTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R (Alt: IRF7809AVTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3708
  • 8000:$0.3555
  • 12000:$0.3507
  • 20000:$0.3371
  • 40000:$0.3327
  • 100000:$0.3244
  • 200000:$0.3165
IRF7809AVTRPBF
DISTI # IRF7809AVTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7809AVTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.4279
  • 8000:$0.4129
  • 16000:$0.3979
  • 24000:$0.3849
  • 40000:$0.3779
IRF7809AVTRPBF
DISTI # SP001555654		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R (Alt: SP001555654)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.5569
  • 8000:€0.4559
  • 16000:€0.4179
  • 24000:€0.3859
  • 40000:€0.3579
IRF7809AVTRPBF
DISTI # 32AC7474		Infineon Technologies AGMOSFET, N-CH, 30V,13.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:13.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation, RoHS Compliant: Yes441
  • 1:$1.0000
  • 10:$0.8470
  • 25:$0.7820
  • 50:$0.7160
  • 100:$0.6510
  • 250:$0.6130
  • 500:$0.5750
  • 1000:$0.4540
IRF7809AVTRPBF
DISTI # 70017458		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 7 Milliohms,ID 13.3A,SO-8,PD 2.5W,VGS +/-12V
RoHS: Compliant		0
  • 4000:$1.6700
  • 8000:$1.6370
  • 20000:$1.5870
  • 40000:$1.5200
  • 100000:$1.4200
IRF7809AVTRPBF
DISTI # 942-IRF7809AVTRPBF		Infineon Technologies AGMOSFET MOSFT 30V 13.3A 9mOhm 41nC
RoHS: Compliant		5704
  • 1:$1.0000
  • 10:$0.8470
  • 100:$0.6510
  • 500:$0.5750
  • 1000:$0.4540
  • 4000:$0.4030
IRF7809AVTRPBFInternational Rectifier 
RoHS: Not Compliant		900
  • 1000:$0.4400
  • 500:$0.4600
  • 100:$0.4800
  • 25:$0.5000
  • 1:$0.5400
IRF7809AVTRPBFInternational Rectifier 1169
    IRF7809AVTRPBF
    DISTI # 1623275    		Infineon Technologies AGMOSFET N-CH 30V 13A HEXFET SOIC8, RL7950
    • 4000:£0.3270
    IRF7809AVTRPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 4000
      IRF7809AVTRPBF
      DISTI # C1S322000486281      		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
      RoHS: Compliant      		870
      • 250:$0.5341
      • 100:$0.5522
      • 25:$0.6722
      • 10:$0.6751
      IRF7809AVTRPBF
      DISTI # C1S322000486272      		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
      RoHS: Compliant      		767
      • 250:$0.5341
      • 100:$0.5522
      • 25:$0.6722
      • 10:$0.6751
      IRF7809AVTRPBF
      DISTI # C1S322000486263      		Infineon Technologies AGTrans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R
      RoHS: Compliant      		4000
      • 500:$0.5270
      • 200:$0.5330
      • 100:$0.5510
      • 50:$0.6700
      • 10:$0.7260
      • 5:$0.7780
      IRF7809AVTRPBF
      DISTI # IRF7809AVTRPBF      		International Rectifier 
      RoHS: Compliant      		6755
      • 1:$0.4500
      • 500:$0.4000
      • 1000:$0.3800
      IRF7809AVTRPBF
      DISTI # 2777386      		Infineon Technologies AGMOSFET, N-CH, 30V,13.3A, SOIC
      RoHS: Compliant      		1376
      • 5:£0.6700
      • 25:£0.6540
      • 100:£0.4800
      • 250:£0.4520
      • 500:£0.4240
      IRF7809AVTRPBF
      DISTI # 2777386      		Infineon Technologies AGMOSFET, N-CH, 30V,13.3A, SOIC
      RoHS: Compliant      		441
      • 5:$1.8500
      • 25:$1.6100
      • 100:$1.3200
      • 250:$1.1100
      • 500:$0.9610
      • 1000:$0.9090
      • 5000:$0.8620
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      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0603 25V 1uF X7R 10% AEC-Q200
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      OMO.#: OMO-M24128-BFMH6TG-STMICROELECTRONICS

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      08055C224KAT4A

      Mfr.#: 08055C224KAT4A

      OMO.#: OMO-08055C224KAT4A-AVX

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.22uF 10%
      CGA3E1X7R1E105K080AE

      Mfr.#: CGA3E1X7R1E105K080AE

      OMO.#: OMO-CGA3E1X7R1E105K080AE-TDK

      		 Cap Ceramic 1uF 25V X7R 10% Pad SMD 0603 FlexiTerm 125C Automotive T/R
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1989
      Menge eingeben:
      Der aktuelle Preis von IRF7809AVTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,99 $
      0,99 $
      10
      0,85 $
      8,47 $
      100
      0,65 $
      65,10 $
      500
      0,58 $
      287,50 $
      1000
      0,45 $
      454,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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      • DOP-W Series Human Machine Interface
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        Delta’s DOP-W series human machine interface (HMI) comes with a high-resolution and high-brightness touch screen in 10.4”, 12”, and 15” sizes.
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