 |  | | |
| PartNumber | IRF7809AV | IRF7809AVPBF | IRF7809AVPBF-1 |
| Description | MOSFET N-CH 30V 13.3A 8-SOIC | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | |
| Manufacturer | IR | International Rectifier | - |
| Product Category | IC Chips | Transistors - FETs, MOSFETs - Single | - |
| Packaging | - | Tube | - |
| Unit Weight | - | 540 mg | - |
| Mounting Style | - | SMD/SMT | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single Quad Drain Triple Source | - |
| Package Case | - | SOIC-8 | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 36 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 13.3 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 9 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 96 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |
| Qg Gate Charge | - | 41 nC | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7809AVTRPBF | MOSFET MOSFT 30V 13.3A 9mOhm 41nC | |
Infineon Technologies |
IRF7809AV | MOSFET N-CH 30V 13.3A 8-SOIC | |
| IRF7809AVTRPBF | MOSFET N-CH 30V 13.3A 8-SOIC | ||
| IRF7809AVPBF | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | ||
| IRF7809AVPBF-1 | Neu und Original | ||
| IRF7809AVPBFDKR-ND | Neu und Original | ||
| IRF7809AVTR | 13.3 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | ||
| IRF7809AVTRPBF-1 | Neu und Original |