FDS4410A

Mfr. #:: FDS4410A
Hersteller:: Rochester Electronics, LLC
Beschreibung:: IGBT Transistors MOSFET LOGIC LEVEL PO SINGLE NCH
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDS4410A Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: FSC

Produktkategorie: IC-Chips

Verpackung: Spule

Teil-Aliasnamen: FDS4410A_NL

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: SOIC-Narrow-8

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single Quad Drain Triple Source

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 2.5 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 9 ns

Anstiegszeit: 5 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 10 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 13.5 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 28 ns

Typische-Einschaltverzögerungszeit: 9 ns

Kanal-Modus: Erweiterung

Tags: FDS4410A, FDS4410, FDS441, FDS44, FDS4, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS4410A Beschreibung

***ark: Transistor,Mosfet,N-Channel,30V V(Br)Dss,10A I(D),So

***ical: Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R

***inecomponents.com: 30V,10A,SINGLE NCH LOGIC LEVEL POWER TRENCH MOSFET

***eco: 008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, SMD (S1)

***ser: Small Signal Transistors LOGIC LEVEL,PO SINGLE NCH

***S: French Electronic Distributor since 1988

***i-Key: SINGLE N CHANNEL, LOGIC-LEVEL, P

***ical: Trans MOSFET N-CH 30V 10.8A 8-Pin SOIC N T/R

***ser: MOSFETs 30V N-ChPowerTrench Single MOSFET

***r Electronics: Small Signal Field-Effect Transistor

***ark: TAPE REEL / 30V N-CH. FET, 12 MO, SO8

***rchild Semiconductor: This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed.

***ical: Trans MOSFET N-CH 30V 7.9A 8-Pin SOIC N T/R

***ark: N Channel Mosfet, 30V, 7.9A, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.9A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and

***or: N-CHANNEL POWER MOSFET

***ser: MOSFETs SO8, NCH, 30V

***ark: MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11.5A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***ser: MOSFETs SO8, PCH, 30V

***et: SO8 SINGLE PMOS 30V 0.045R

***i-Key: P-CHANNEL MOSFET

***et: TRANS MOSFET N-CH 20V 6.5A 8SOIC

***ser: MOSFETs SO8 DUAL, NCH, 20V

***S: French Electronic Distributor since 1988

***i-Key: N-CHANNEL POWER MOSFET

***et Japan: Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R

***ure Electronics: SI4946 Series 60 V 0.041 Ohm 25 nC Dual N-Channel SMT Power Mosfet - SOIC-8

***enic: 60V 6.5A 3.7W 41m´Î@10V5.3A 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: Transistor Polarity:N Channel Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.7W

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~175°C TJ 41m Ω @ 5.3A, 10V 3V @ 250μA MOSFET 2N-CH 60V 6.5A 8-SOIC

***ark: DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:6.5A; Continuous Drain Current Id P Channel:- RoHS Compliant: No

***nell: MOSFET, DUAL, N, SOIC; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:60V; Current, Id Cont:6.5A; Resistance, Rds On:0.041ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-50°C to +175°C; Base Number:4946; N-channel Gate Charge:9.2nC; No. of Pins:8; Resistance, Rds on @ Vgs = 10V:0.041ohm; Resistance, Rds on @ Vgs = 4.5V:0.052ohm; Voltage, Vds Max:60V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDS4410A DISTI # FDS4410A	ON Semiconductor	Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS4410A) RoHS: Compliant Container: Reel	Americas - 0
FDS4410A DISTI # FDS4410A	ON Semiconductor	Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R (Alt: FDS4410A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
FDS4410A DISTI # 64K0976	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,10A I(D),SO	0
FDS4410A	Fairchild Semiconductor Corporation	RoHS: Not Compliant	5433	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
FDS4410A DISTI # 512-FDS4410A	ON Semiconductor	MOSFET LOGIC LEVEL PO SINGLE NCH RoHS: Compliant	0
FDS4410A	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, SO	1664	1123:$0.8100 602:$0.8910 1:$2.1600
FDS4410A	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, SO	10	6:$0.7864 1:$0.9830
FDS4410A	Fairchild Semiconductor Corporation	INSTOCK	2257

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDS4559 OMO.#: OMO-FDS4559	MOSFET 60V/-60V N/P
	Mfr.#: FDS4072N7 OMO.#: OMO-FDS4072N7-ON-SEMICONDUCTOR	MOSFET N-CH 40V 12.4A 8-SOIC
	Mfr.#: FDS4435-NL OMO.#: OMO-FDS4435-NL-1190	Neu und Original
	Mfr.#: FDS4467NL OMO.#: OMO-FDS4467NL-1190	Neu und Original
	Mfr.#: FDS4488NL OMO.#: OMO-FDS4488NL-1190	Neu und Original
	Mfr.#: FDS4501H OMO.#: OMO-FDS4501H-ON-SEMICONDUCTOR	MOSFET N/P-CH 30V/20V 8SOIC
	Mfr.#: FDS4770-NL OMO.#: OMO-FDS4770-NL-1190	Neu und Original
	Mfr.#: FDS4895C-NL OMO.#: OMO-FDS4895C-NL-1190	Neu und Original
	Mfr.#: FDS4935BZ_F065 OMO.#: OMO-FDS4935BZ-F065-1190	Neu und Original
	Mfr.#: FDS4465-CUT TAPE OMO.#: OMO-FDS4465-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von FDS4410A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,70 $~~; ~~0,70 $~~

10: ~~0,67 $~~; ~~6,70 $~~

100: ~~0,63 $~~; ~~63,45 $~~

500: ~~0,60 $~~; ~~299,65 $~~

1000: ~~0,56 $~~; ~~564,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDS4410A 3
FDS4410 9
FDS441 13
FDS44 83
FDS4 188
FDS 1298

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FDS4410A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes