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IPD50R399CPATMA1

IPD50R399CPATMA1
Mfr. #:
IPD50R399CPATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 550V 9A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD50R399CPATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
9 A
Rds On - Drain-Source-Widerstand:
399 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
17 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
IPD50R399CP SP001117700
Gewichtseinheit:
0.139332 oz
Tags
IPD50R39, IPD50R3, IPD50R, IPD50, IPD5, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 550V 9A 3-Pin TO-252 T/R
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 9A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
IPD50R399CPATMA1
DISTI # V72:2272_06383433		Infineon Technologies AGTrans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R50
  • 25:$1.2676
  • 10:$1.2777
  • 1:$1.6042
IPD50R399CPATMA1
DISTI # V36:1790_06383433		Infineon Technologies AGTrans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R0
    IPD50R399CPATMA1
    DISTI # IPD50R399CPATMA1-ND    		Infineon Technologies AGLOW POWER_LEGACY
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Limited Supply - Call
    • 2500:$0.8819
    IPD50R399CPATMA1
    DISTI # 26195187    		Infineon Technologies AGTrans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R50
    • 25:$1.3627
    • 10:$1.3735
    • 9:$1.5678
    IPD50R399CPATMA1
    DISTI # IPD50R399CPATMA1    		Infineon Technologies AGTrans MOSFET N-CH 550V 9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50R399CPATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.7539
    • 15000:$0.7679
    • 10000:$0.7949
    • 5000:$0.8239
    • 2500:$0.8549
    IPD50R399CPATMA1
    DISTI # SP001117700    		Infineon Technologies AGTrans MOSFET N-CH 550V 9A 3-Pin TO-252 T/R (Alt: SP001117700)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.7059
    • 15000:€0.7599
    • 10000:€0.8239
    • 5000:€0.8989
    • 2500:€1.0979
    IPD50R399CPATMA1
    DISTI # 726-IPD50R399CPATMA1    		Infineon Technologies AGMOSFET N-Ch 550V 9A DPAK-22335
    • 1:$1.7400
    • 10:$1.4800
    • 100:$1.1800
    • 500:$1.0400
    • 1000:$0.8620
    • 2500:$0.8020
    • 5000:$0.7730
    • 10000:$0.7430
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IPD50R399CPATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,74 $
    1,74 $
    10
    1,48 $
    14,80 $
    100
    1,18 $
    118,00 $
    500
    1,04 $
    520,00 $
    1000
    0,86 $
    862,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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