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IHW25N120R2FKSA1

IHW25N120R2FKSA1
Mfr. #:
IHW25N120R2FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode.
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IHW25N120R2FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IHW25N120R2FKSA1 DatasheetIHW25N120R2FKSA1 Datasheet (P4-P6)IHW25N120R2FKSA1 Datasheet (P7-P9)IHW25N120R2FKSA1 Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247-3
Serie:
600V TRENCHSTOP
Verpackung:
Rohr
Marke:
Infineon-Technologien
Produktart:
IGBT-Transistoren
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IHW25N120R2 IHW25N12R2XK SP000212016
Tags
IHW25N120R2, IHW25N120R, IHW25N, IHW25, IHW2, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:365W
***ineon SCT
The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses, PG-TO247-3, RoHS
***ineon
IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price
Teil # Mfg. Beschreibung Aktie Preis
IHW25N120R2FKSA1
DISTI # V99:2348_06377991		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		236
  • 500:$3.5270
  • 250:$3.6910
  • 100:$3.8470
  • 50:$4.0110
  • 25:$4.1720
  • 10:$4.2740
  • 1:$5.1656
IHW25N120R2FKSA1
DISTI # IHW25N120R2FKSA1-ND		Infineon Technologies AGIGBT 1200V 50A 365W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		57In Stock
  • 25:$3.9580
  • 10:$4.1870
  • 1:$4.6600
IHW25N120R2FKSA1
DISTI # 31073933		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$1.9774
IHW25N120R2FKSA1
DISTI # 26197353		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		236
  • 3:$5.1656
IHW25N120R2FKSA1
DISTI # 13AC9003		Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:365W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes281
  • 500:$3.3500
  • 250:$3.6200
  • 100:$3.8700
  • 50:$4.1300
  • 25:$4.3800
  • 10:$4.6500
  • 1:$5.1300
IHW25N120R2
DISTI # 726-IHW25N120R2		Infineon Technologies AGIGBT Transistors REVERSE CONDUCT IGBT 1200V 25A
RoHS: Compliant		372
  • 1:$4.4300
  • 10:$3.7700
  • 100:$3.2600
  • 250:$3.1000
  • 500:$2.7800
IHW25N120R2FKSA1
DISTI # N/A		Infineon Technologies AGIGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode.0
    IHW25N120R2FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
    RoHS: Compliant    		390
    • 1000:$1.9000
    • 500:$1.9900
    • 100:$2.0800
    • 25:$2.1700
    • 1:$2.3300
    IHW25N120R2FKSA1
    DISTI # 8922116    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, PK20
    • 500:£2.0880
    • 200:£2.1280
    • 100:£2.2500
    • 20:£2.6030
    • 4:£3.2850
    IHW25N120R2FKSA1
    DISTI # 8922116P    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, TU96
    • 500:£2.0880
    • 200:£2.1280
    • 100:£2.2500
    • 20:£2.6030
    IHW25N120R2FKSA1
    DISTI # 2725782    		Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 50A, TO-247
    RoHS: Compliant    		278
    • 10:$6.3100
    • 1:$7.0200
    IHW25N120R2FKSA1
    DISTI # 2725782    		Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 50A, TO-247281
    • 500:£3.1000
    • 250:£3.1700
    • 100:£3.2300
    • 10:£3.3000
    • 1:£4.0900
    Bild Teil # Beschreibung
    IHW25N120E1XKSA1

    Mfr.#: IHW25N120E1XKSA1

    OMO.#: OMO-IHW25N120E1XKSA1

    		 IGBT Transistors IGBT PRODUCTS
    IHW25N120E1XKSA1

    Mfr.#: IHW25N120E1XKSA1

    OMO.#: OMO-IHW25N120E1XKSA1-INFINEON-TECHNOLOGIES

    		 IGBT NPT/TRENCH 1200V 50A TO247
    IHW25N120E1

    Mfr.#: IHW25N120E1

    OMO.#: OMO-IHW25N120E1-1190

    		 IGBT, SINGLE, 1.2KV, 50A, TO-247
    IHW25N120R2 H25R1202

    Mfr.#: IHW25N120R2 H25R1202

    OMO.#: OMO-IHW25N120R2-H25R1202-1190

    		 Neu und Original
    IHW25N120R2,IHW30N160R2,

    Mfr.#: IHW25N120R2,IHW30N160R2,

    OMO.#: OMO-IHW25N120R2-IHW30N160R2--1190

    		 Neu und Original
    IHW25N120R2FKSA1

    Mfr.#: IHW25N120R2FKSA1

    OMO.#: OMO-IHW25N120R2FKSA1-INFINEON-TECHNOLOGIES

    		 IGBT 1200V 50A 365W TO247-3
    IHW25N120R2S

    Mfr.#: IHW25N120R2S

    OMO.#: OMO-IHW25N120R2S-1190

    		 Neu und Original
    IHW25N120R3

    Mfr.#: IHW25N120R3

    OMO.#: OMO-IHW25N120R3-1190

    		 Neu und Original
    IHW25N120T

    Mfr.#: IHW25N120T

    OMO.#: OMO-IHW25N120T-1190

    		 Neu und Original
    IHW25N120R2

    Mfr.#: IHW25N120R2

    OMO.#: OMO-IHW25N120R2-126

    		 IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von IHW25N120R2FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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