 |  |  | |
| PartNumber | IHW25N120E1XKSA1 | IHW25N120R2 | IHW25N120R2FKSA1 |
| Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A | IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | 1.6 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 50 A | 50 A | - |
| Pd Power Dissipation | 231 W | 365 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 50 A | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 240 | 240 | - |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | IHW25N120E1 SP001391910 | IHW25N120R2FKSA1 IHW25N12R2XK SP000212016 | IHW25N120R2 IHW25N12R2XK SP000212016 |
| Unit Weight | 0.211644 oz | 1.340411 oz | - |
| Series | - | 600V TRENCHSTOP | 600V TRENCHSTOP |
| Height | - | 20.95 mm | - |
| Length | - | 15.9 mm | - |
| Width | - | 5.3 mm | - |
| Tradename | - | TRENCHSTOP | TRENCHSTOP |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IHW25N120E1XKSA1 | IGBT Transistors IGBT PRODUCTS | |
| IHW25N120R2 | IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A | ||
| IHW25N120E1XKSA1 | IGBT NPT/TRENCH 1200V 50A TO247 | ||
| IHW25N120R2FKSA1 | IGBT 1200V 50A 365W TO247-3 | ||
Infineon Technologies |
IHW25N120R2FKSA1 | IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | |
| IHW25N120E | Neu und Original | ||
| IHW25N120E1 | IGBT, SINGLE, 1.2KV, 50A, TO-247 | ||
| IHW25N120R2 H25R1202 | Neu und Original | ||
| IHW25N120R2,H25N1202, | Neu und Original | ||
| IHW25N120R2,IHW30N160R2, | Neu und Original | ||
| IHW25N120R2S | Neu und Original | ||
| IHW25N120R3 | Neu und Original | ||
| IHW25N120T | Neu und Original | ||
| IHW25R120 | Neu und Original | ||
| IHW25R120R2 | Neu und Original | ||
| IHW25T120 | Neu und Original | ||
| IHW25N120R2XK | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW25N120R2FKSA1) | ||
| IHW25N120R2 | IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A |