OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1
Mfr. #:
IPN80R1K2P7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LOW POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPN80R1K2P7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPN80R1K2P7ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
4.5 A
Rds On - Drain-Source-Widerstand:
1 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
11 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
6.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPN80R1K2P7 SP001664998
Tags
IPN80R1, IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) SOT-223 T/R
***ronik
N-CH 800V 4,5A 1000mOhm SOT223
***ure Electronics
800V, 4.5A, 1.2 Ohms, SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ark
Mosfet, N-Ch, 800V, 4.5A, 6.8W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.8W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 800V, 4.5A, 6.8W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.8W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Teil # Mfg. Beschreibung Aktie Preis
IPN80R1K2P7ATMA1
DISTI # V72:2272_19084644		Infineon Technologies AGIPN80R1K2P73000
  • 3000:$0.3913
  • 1000:$0.4412
  • 500:$0.5084
  • 250:$0.5869
  • 100:$0.6111
  • 25:$0.6525
  • 10:$0.7975
  • 1:$0.9603
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1TR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.3954
  • 6000:$0.4108
  • 3000:$0.4325
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1CT-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4773
  • 500:$0.6045
  • 100:$0.7318
  • 10:$0.9390
  • 1:$1.0500
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1DKR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4773
  • 500:$0.6045
  • 100:$0.7318
  • 10:$0.9390
  • 1:$1.0500
IPN80R1K2P7ATMA1
DISTI # 33620974		Infineon Technologies AGIPN80R1K2P73000
  • 17:$0.9603
IPN80R1K2P7ATMA1
DISTI # 33356367		Infineon Technologies AGIPN80R1K2P73000
  • 3000:$0.3686
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R1K2P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3729
  • 18000:$0.3799
  • 12000:$0.3929
  • 6000:$0.4079
  • 3000:$0.4229
IPN80R1K2P7ATMA1
DISTI # SP001664998		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R (Alt: SP001664998)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3869
  • 18000:€0.4079
  • 12000:€0.4749
  • 6000:€0.5579
  • 3000:€0.6489
IPN80R1K2P7ATMA1
DISTI # 93AC7124		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2970
  • 1000:$0.4460
  • 500:$0.5650
  • 250:$0.6020
  • 100:$0.6390
  • 50:$0.7040
  • 25:$0.7680
  • 10:$0.8320
  • 1:$0.9700
IPN80R1K2P7ATMA1
DISTI # 726-IPN80R1K2P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		5384
  • 1:$0.9600
  • 10:$0.8240
  • 100:$0.6330
  • 500:$0.5590
  • 1000:$0.4420
  • 3000:$0.3920
  • 9000:$0.3770
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,3.1A,6.8W,PG-SOT2232604
  • 500:$0.4700
  • 100:$0.5100
  • 20:$0.5600
  • 5:$0.6400
  • 1:$0.7100
IPN80R1K2P7ATMA1
DISTI # 2986362		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223
RoHS: Compliant		2970
  • 1000:$0.5890
  • 500:$0.6920
  • 250:$0.7520
  • 100:$0.8130
  • 25:$1.1700
  • 5:$1.2800
IPN80R1K2P7ATMA1
DISTI # 2986362		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-2232970
  • 100:£0.5740
  • 10:£0.8120
  • 1:£0.9940
Bild Teil # Beschreibung
SMCJ300A

Mfr.#: SMCJ300A

OMO.#: OMO-SMCJ300A

 TVS Diodes / ESD Suppressors 1.5kW 300V 5% Uni-Directional
TK4R3E06PL,S1X

Mfr.#: TK4R3E06PL,S1X

OMO.#: OMO-TK4R3E06PL-S1X

 MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
NCP431ACDR2G

Mfr.#: NCP431ACDR2G

OMO.#: OMO-NCP431ACDR2G

 Voltage References ANA 2.5V PROG SHUNT REF
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1

 Power Management IC Development Tools 45W adapter evaluation board
1C6UL

Mfr.#: 1C6UL

OMO.#: OMO-1C6UL

 Circuit Breakers 6A, C CHAR, 1POLE 277VAC, UL489
250R180F

Mfr.#: 250R180F

OMO.#: OMO-250R180F-LITTELFUSE

 Resettable Fuses - PPTC 0.18A 250V RADIAL
EVAL3KW2LLCC720TOBO1

Mfr.#: EVAL3KW2LLCC720TOBO1

OMO.#: OMO-EVAL3KW2LLCC720TOBO1-INFINEON-TECHNOLOGIES

 3000W DC-DC SMPS
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1-INFINEON-TECHNOLOGIES

 EVAL KIT 800V COOLMOS P7
TNPW0603100KBEEA

Mfr.#: TNPW0603100KBEEA

OMO.#: OMO-TNPW0603100KBEEA-VISHAY-DALE

 Thin Film Resistors - SMD 100Kohms .1% 25ppm
NCP431ACDR2G

Mfr.#: NCP431ACDR2G

OMO.#: OMO-NCP431ACDR2G-ON-SEMICONDUCTOR

 Voltage References ANA 2.5V PROG SHUNT REF
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von IPN80R1K2P7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,96 $
0,96 $
10
0,82 $
8,24 $
100
0,63 $
63,30 $
500
0,56 $
279,50 $
1000
0,44 $
442,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top