IPD110N12N3GATMA1

Mfr. #:: IPD110N12N3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MV POWER MOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD110N12N3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 120 V

Id - Kontinuierlicher Drainstrom:: 75 A

Rds On - Drain-Source-Widerstand:: 11 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 49 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 136 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 42 S

Abfallzeit:: 8 ns

Produktart:: MOSFET

Anstiegszeit:: 16 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 24 ns

Typische Einschaltverzögerungszeit:: 16 ns

Teil # Aliase:: G IPD110N12N3 SP001127808

Gewichtseinheit:: 0.017284 oz

Tags: IPD110, IPD11, IPD1, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD110N12N3GATMA1 Beschreibung

***ark: MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drai

***ure Electronics: Single N-Channel 120 V 11 mOhm 49 nC OptiMOS Power Mosfet - DPAK

***p One Stop Japan: Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD110N12N3GATMA1 DISTI # V72:2272_06383619	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	299	250:$1.1297 100:$1.2551 25:$1.5564 10:$1.5606 1:$2.0189
IPD110N12N3GATMA1 DISTI # V36:1790_06383619	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	0	2500000:$0.7354 1250000:$0.7358 250000:$0.7840 25000:$0.8786 2500:$0.8949
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13340In Stock	1000:$0.9900 500:$1.1948 100:$1.4543 10:$1.8090 1:$2.0100
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13340In Stock	1000:$0.9900 500:$1.1948 100:$1.4543 10:$1.8090 1:$2.0100
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	5000:$0.8617 2500:$0.8949
IPD110N12N3GATMA1 DISTI # 31696314	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	299	8:$2.0189
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD110N12N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.8019 15000:$0.8159 10000:$0.8449 5000:$0.8759 2500:$0.9089
IPD110N12N3GATMA1 DISTI # SP001127808	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R (Alt: SP001127808) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6859 15000:€0.7349 10000:€0.7919 5000:€0.8579 2500:€1.0299
IPD110N12N3GATMA1 DISTI # 47W3469	Infineon Technologies AG	MOSFET, N CHANNEL, 120V, 75A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0092ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2152	1000:$1.0200 500:$1.2200 250:$1.3100 100:$1.4000 50:$1.5200 25:$1.6300 10:$1.7500 1:$2.0600
IPD110N12N3GATMA1 DISTI # 726-IPD110N12N3GATM1	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	9748	1:$1.8500 10:$1.5700 100:$1.2600 500:$1.1000 1000:$0.9160 2500:$0.8530 5000:$0.8210 10000:$0.7900
IPD110N12N3GATMA1 DISTI # 7545462P	Infineon Technologies AG	MOSFET N-CHANNEL 120V 75A OPTIMOS3 TO252, RL	1844	1250:£0.6700 626:£0.7450 126:£0.8350 26:£0.9250
IPD110N12N3GATMA1 DISTI # 7545462	Infineon Technologies AG	MOSFET N-CHANNEL 120V 75A OPTIMOS3 TO252, PK	106	1250:£0.6700 626:£0.7450 126:£0.8350 26:£0.9250 2:£1.5200
IPD110N12N3GATMA1 DISTI # 2212834	Infineon Technologies AG	MOSFET, N-CH, 120V, 75A, TO252-3 RoHS: Compliant	1117	10000:$1.2400 5000:$1.2700 2500:$1.3300 1000:$1.4200 500:$1.6300 100:$1.9300 10:$2.3600 1:$2.7200
IPD110N12N3GATMA1 DISTI # 2212834	Infineon Technologies AG	MOSFET, N-CH, 120V, 75A, TO252-3	3527	500:£0.8570 250:£0.9190 100:£0.9800 10:£1.2600 1:£1.6400

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Verfügbarkeit

Aktie:: 13
Auf Bestellung:: 1996
Menge eingeben:

Der aktuelle Preis von IPD110N12N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,85 $~~; ~~1,85 $~~

10: ~~1,57 $~~; ~~15,70 $~~

100: ~~1,26 $~~; ~~126,00 $~~

500: ~~1,10 $~~; ~~550,00 $~~

1000: ~~0,92 $~~; ~~916,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD110N12N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes