IPD100N06S403ATMA2

IPD100N06S403ATMA2
Mfr. #:
IPD100N06S403ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 60V 100A TO252-3-11
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD100N06S403ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPD100N06, IPD100, IPD10, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, Aec-Q101, N-Ch, 60V, 100A, 150W Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-252 T/R
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-252
***Components
MOSFET N-chan OptiMOS-T2 60V 100A TO252
***i-Key
MOSFET N-CH 60V 100A TO252-3-11
***ronik
N-CH 60V 100A 3,5mOhm TO252
***nell
MOSFET, AEC-Q101, N-CH, 60V, 100A, 150W; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:100A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.0028ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:150W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:OptiMOS T2 Series; Kwalifikacja motoryzacyjna:AEC-Q101; Substancje SVHC:No SVHC (15-Jan-2019)
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, 100A, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra Low RDSon; Ultra High ID | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
IPD100N06S403ATMA2
DISTI # V72:2272_06384120
Infineon Technologies AGTrans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1809
  • 1000:$0.8198
  • 500:$0.8359
  • 250:$0.9675
  • 100:$0.9775
  • 25:$1.2297
  • 10:$1.2421
  • 1:$1.6183
IPD100N06S403ATMA2
DISTI # V36:1790_06384120
Infineon Technologies AGTrans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.8269
  • 1250000:$0.8272
  • 250000:$0.8431
  • 25000:$0.8696
  • 2500:$0.8739
IPD100N06S403ATMA2
DISTI # IPD100N06S403ATMA2-ND
Infineon Technologies AGMOSFET N-CH 60V 100A TO252-3-11
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8739
IPD100N06S403ATMA2
DISTI # 32020233
Infineon Technologies AGTrans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1809
  • 1000:$0.8198
  • 500:$0.8359
  • 250:$0.9675
  • 100:$0.9775
  • 25:$1.2297
  • 10:$1.2421
  • 9:$1.6183
IPD100N06S403ATMA2
DISTI # SP001028766
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: SP001028766)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 2500
  • 25000:€0.8039
  • 15000:€0.8619
  • 10000:€0.9279
  • 5000:€1.0049
  • 2500:€1.2059
IPD100N06S403ATMA2
DISTI # IPD100N06S403ATMA2
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R - Bulk (Alt: IPD100N06S403ATMA2)
RoHS: Compliant
Min Qty: 432
Container: Bulk
Americas - 0
  • 4320:$0.7359
  • 2160:$0.7499
  • 1296:$0.7759
  • 864:$0.8049
  • 432:$0.8349
IPD100N06S403ATMA2
DISTI # IPD100N06S403ATMA2
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD100N06S403ATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.9019
  • 15000:$0.9179
  • 10000:$0.9499
  • 5000:$0.9849
  • 2500:$1.0219
IPD100N06S403ATMA2
DISTI # 726-IPD100N06S403ATM
Infineon Technologies AGMOSFET MOSFET
RoHS: Compliant
1074
  • 1:$1.4800
  • 10:$1.2600
  • 100:$1.0100
  • 500:$0.8810
  • 1000:$0.7300
  • 2500:$0.6790
IPD100N06S4-03
DISTI # 726-IPD100N06S4-03
Infineon Technologies AGMOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2
RoHS: Compliant
0
    IPD100N06S403ATMA2Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    RoHS: Compliant
    388
    • 1000:$0.7600
    • 500:$0.8000
    • 100:$0.8400
    • 25:$0.8700
    • 1:$0.9400
    IPD100N06S403ATMA2
    DISTI # XSKDRABV0021231
    Infineon Technologies AG 
    RoHS: Compliant
    7500 in Stock0 on Order
    • 7500:$1.2700
    • 2500:$1.3600
    Bild Teil # Beschreibung
    IPD100N06S403ATMA2

    Mfr.#: IPD100N06S403ATMA2

    OMO.#: OMO-IPD100N06S403ATMA2

    MOSFET MOSFET
    IPD100N06S403ATMA1

    Mfr.#: IPD100N06S403ATMA1

    OMO.#: OMO-IPD100N06S403ATMA1

    MOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2
    IPD100N06S403ATMA2

    Mfr.#: IPD100N06S403ATMA2

    OMO.#: OMO-IPD100N06S403ATMA2-INFINEON-TECHNOLOGIES

    MOSFET N-CH 60V 100A TO252-3-11
    IPD100N06S4-03(SP0010287

    Mfr.#: IPD100N06S4-03(SP0010287

    OMO.#: OMO-IPD100N06S4-03-SP0010287-1190

    Neu und Original
    IPD100N06S403ATMA1

    Mfr.#: IPD100N06S403ATMA1

    OMO.#: OMO-IPD100N06S403ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 60V 100A TO252-3-11
    IPD100N06S4-03

    Mfr.#: IPD100N06S4-03

    OMO.#: OMO-IPD100N06S4-03-126

    IGBT Transistors MOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IPD100N06S403ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,00 $
    1,00 $
    10
    0,95 $
    9,49 $
    100
    0,90 $
    89,87 $
    500
    0,85 $
    424,40 $
    1000
    0,80 $
    798,80 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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