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SIDR626DP-T1-GE3

SIDR626DP-T1-GE3
Mfr. #:
SIDR626DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHAN 60V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR626DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIDR626DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIDR62, SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR626DP-T1-GE3
DISTI # V72:2272_21764850		Vishay IntertechnologiesSIDR626DP-T1-GE32884
  • 75000:$1.2210
  • 30000:$1.2250
  • 15000:$1.2300
  • 6000:$1.2340
  • 3000:$1.2389
  • 1000:$1.4620
  • 500:$1.5750
  • 250:$1.6400
  • 100:$1.8220
  • 50:$1.9070
  • 25:$2.1189
  • 10:$2.3540
  • 1:$3.1064
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 60V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5659In Stock
  • 1000:$1.4396
  • 500:$1.7374
  • 100:$2.1147
  • 10:$2.6310
  • 1:$2.9300
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 60V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5659In Stock
  • 1000:$1.4396
  • 500:$1.7374
  • 100:$2.1147
  • 10:$2.6310
  • 1:$2.9300
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 60V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$1.2852
  • 3000:$1.3013
SIDR626DP-T1-GE3
DISTI # 31012431		Vishay IntertechnologiesSIDR626DP-T1-GE32884
  • 1000:$1.3280
  • 500:$1.5750
  • 250:$1.6400
  • 100:$1.8220
  • 50:$1.9070
  • 25:$2.1189
  • 10:$2.3540
  • 6:$3.1064
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR626DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$1.0900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 6000:$1.2900
SIDR626DP-T1-GE3
DISTI # 59AC7338		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$1.1500
  • 6000:$1.2000
  • 4000:$1.2400
  • 2000:$1.3800
  • 1000:$1.4500
  • 1:$1.5500
SIDR626DP-T1-GE3
DISTI # 78AC6503		Vishay IntertechnologiesMOSFET, N-CH, 60V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes5840
  • 500:$1.6200
  • 250:$1.7300
  • 100:$1.8500
  • 50:$2.0300
  • 25:$2.2100
  • 10:$2.3900
  • 1:$2.8800
SIDR626DP-T1-GE3
DISTI # 78-SIDR626DP-T1-GE3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		5635
  • 1:$2.8500
  • 10:$2.3700
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3300
  • 3000:$1.2400
  • 6000:$1.1900
SIDR626DP-T1-GE3
DISTI # 2932898		Vishay IntertechnologiesMOSFET, N-CH, 60V, 100A, 150DEG C, 125W
RoHS: Compliant		5840
  • 1000:$2.7900
  • 500:$2.9400
  • 250:$3.1300
  • 100:$3.4100
  • 10:$3.9300
  • 1:$4.5100
SIDR626DP-T1-GE3
DISTI # 2932898		Vishay IntertechnologiesMOSFET, N-CH, 60V, 100A, 150DEG C, 125W5840
  • 500:£1.2500
  • 250:£1.2900
  • 100:£1.3400
  • 10:£1.7400
  • 1:£2.3600
Bild Teil # Beschreibung
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3

 MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3-VISHAY

 MOSFET N-CHAN 60V
SIDR626DP

Mfr.#: SIDR626DP

OMO.#: OMO-SIDR626DP-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von SIDR626DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,64 $
1,64 $
10
1,55 $
15,53 $
100
1,47 $
147,15 $
500
1,39 $
694,90 $
1000
1,31 $
1 308,00 $
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