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SIZ340DT-T1-GE3

SIZ340DT-T1-GE3
Mfr. #:
SIZ340DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ340DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ340DT-T1-GE3 DatasheetSIZ340DT-T1-GE3 Datasheet (P4-P6)SIZ340DT-T1-GE3 Datasheet (P7-P9)SIZ340DT-T1-GE3 Datasheet (P10-P12)SIZ340DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SIZ340DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-3x3-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A, 40 A
Rds On - Drain-Source-Widerstand:
9.5 mOhms, 5.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
19 nC, 35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
16.7 W, 31 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
37 S, 60 S
Abfallzeit:
7 ns, 7 ns
Produktart:
MOSFET
Anstiegszeit:
55 ns, 82 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns, 20 ns
Typische Einschaltverzögerungszeit:
13 ns, 22 ns
Tags
SIZ34, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, Dual N-Channel MOSFET, 30 A, 40 A, 30 V, 8-Pin PowerPAIR Vishay SIZ340DT-T1-GE3
***ical
Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R
***et Europe
Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R
***ied Electronics & Automation
MOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP
***ure Electronics
MOSFET 2N-CH 30V 30A SOT-23
***ark
MOSFET, DUAL N-CH, 30V, 40A, POWERPAIR-8
***i-Key
MOSFET 2N-CH 30V 30A PWRPAIR3X3
***et
DUAL N-CH POWERPAIR 3X3 30V 9.5 MOHM@10V
***
DUAL N-CHANNEL 30-V (D-S)
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Teil # Mfg. Beschreibung Aktie Preis
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4096
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4521
  • 500:$0.5726
  • 100:$0.7384
  • 10:$0.9340
  • 1:$1.0500
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4521
  • 500:$0.5726
  • 100:$0.7384
  • 10:$0.9340
  • 1:$1.0500
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.3869
  • 12000:$0.3749
  • 18000:$0.3599
  • 30000:$0.3499
  • 60000:$0.3409
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.3869
  • 12000:$0.3749
  • 18000:$0.3599
  • 30000:$0.3499
  • 60000:$0.3409
SIZ340DT-T1-GE3
DISTI # 29X6567		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 30A/40A 9-Pin PowerPAIR Case - Product that comes on tape, but is not reeled (Alt: 29X6567)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 29X6568		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes0
  • 1:$0.4150
  • 6000:$0.4130
  • 9000:$0.3940
  • 12000:$0.3540
SIZ340DT-T1-GE3
DISTI # 29X6567		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 55X3089		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V , RoHS Compliant: Yes0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 70617613		Vishay SiliconixMOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP
RoHS: Compliant		0
  • 100:$0.5800
  • 1500:$0.4300
  • 3000:$0.3900
  • 6000:$0.3700
SIZ340DT-T1-GE3
DISTI # 78-SIZ340DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
RoHS: Compliant		0
  • 1:$0.9400
  • 10:$0.7670
  • 100:$0.5880
  • 500:$0.5060
  • 1000:$0.4790
  • 3000:$0.4440
SIZ340DT-T1-GE3
DISTI # 2422226		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
RoHS: Compliant		0
  • 1:$1.5000
  • 10:$1.2200
  • 100:$0.9310
  • 500:$0.8020
  • 1000:$0.6320
  • 3000:$0.5910
  • 6000:$0.5600
  • 9000:$0.5400
SIZ340DT-T1-GE3
DISTI # 2422226RL		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
RoHS: Compliant		0
  • 1:$1.5000
  • 10:$1.2200
  • 100:$0.9310
  • 500:$0.8020
  • 1000:$0.6320
  • 3000:$0.5910
  • 6000:$0.5600
  • 9000:$0.5400
SIZ340DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3Americas -
    SIZ340DT-T1-GE3
    DISTI # 2422226    		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
    RoHS: Compliant    		0
    • 5:£0.6070
    • 25:£0.5950
    • 100:£0.4440
    • 250:£0.4290
    • 500:£0.3910
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    Mfr.#: CRCW04022K21FKEDC

    OMO.#: OMO-CRCW04022K21FKEDC

    		 Thick Film Resistors - SMD 1/16W 2.21Kohms 1% Commercial Use
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    OMO.#: OMO-NCP18XH103J03RB-MURATA-ELECTRONICS

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    DSC1121CM1-100.0000T

    Mfr.#: DSC1121CM1-100.0000T

    OMO.#: OMO-DSC1121CM1-100-0000T-MICROCHIP-TECHNOLOGY

    		 Oscillator MEMS 100MHz ±50ppm (Stability) 15pF CMOS 55% 2.5V/3.3V Automotive 6-Pin QFN SMD T/R
    SIRC18DP-T1-GE3

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    OMO.#: OMO-SIRC18DP-T1-GE3-VISHAY

    		 N-Channel 30 V (D-S) MOSFET with Schottky Diode
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    		 D10/CRCW0402-C 200 100K 5% ET7
    Verfügbarkeit
    Aktie:
    21
    Auf Bestellung:
    2004
    Menge eingeben:
    Der aktuelle Preis von SIZ340DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,93 $
    0,93 $
    10
    0,77 $
    7,67 $
    100
    0,59 $
    58,80 $
    500
    0,51 $
    253,00 $
    1000
    0,40 $
    399,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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