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FQH8N100C

FQH8N100C
Mfr. #:
FQH8N100C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 1000V N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQH8N100C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
1.45 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
225 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
20.82 mm
Länge:
15.87 mm
Serie:
FQH8N100C
Transistortyp:
1 N-Channel
Breite:
4.82 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
80 ns
Produktart:
MOSFET
Anstiegszeit:
95 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
122 ns
Typische Einschaltverzögerungszeit:
50 ns
Gewichtseinheit:
0.225401 oz
Tags
FQH8, FQH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***m
    A***m
    MV

    good

    2019-03-10
    S***v
    S***v
    BG

    NOTHING. The seller did not send me anything. Do not buy

    2019-07-11
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-247
***r Electronics
Power Field-Effect Transistor, 8A I(D), 1000V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N-CH, 1KV, 8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQH8N100C
DISTI # V99:2348_06359880		ON Semiconductor1000V, 8A, CFET367
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # V36:1790_06359880		ON Semiconductor1000V, 8A, CFET28
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # FQH8N100C-ND		ON SemiconductorMOSFET N-CH 1000V 8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		416In Stock
  • 1350:$1.9663
  • 900:$2.0966
  • 450:$2.5526
  • 10:$3.3990
  • 1:$3.7900
FQH8N100C
DISTI # 31014348		ON Semiconductor1000V, 8A, CFET450
  • 450:$1.9200
FQH8N100C
DISTI # 31268064		ON Semiconductor1000V, 8A, CFET367
  • 5:$2.6370
FQH8N100C
DISTI # 31040247		ON Semiconductor1000V, 8A, CFET28
  • 100:$2.0320
  • 10:$2.3030
  • 5:$2.6370
FQH8N100C
DISTI # 30617742		ON Semiconductor1000V, 8A, CFET18
  • 10:$2.4863
  • 7:$3.6720
FQH8N100C
DISTI # FQH8N100C		ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FQH8N100C)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.3900
  • 900:$1.3900
  • 1800:$1.2900
  • 2700:$1.2900
  • 4500:$1.2900
FQH8N100C
DISTI # 46AC0861		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes197
  • 1:$3.2700
  • 10:$2.8500
  • 25:$2.5100
  • 50:$2.3600
  • 100:$2.0600
  • 250:$1.7600
  • 500:$1.6900
FQH8N100CON Semiconductor 
RoHS: Not Compliant		600
  • 1000:$1.7600
  • 500:$1.8600
  • 100:$1.9300
  • 25:$2.0200
  • 1:$2.1700
FQH8N100C
DISTI # 512-FQH8N100C		ON SemiconductorMOSFET 1000V N-Channel
RoHS: Compliant		550
  • 1:$3.1400
  • 10:$2.6700
  • 100:$2.3100
  • 250:$2.2000
  • 500:$1.9700
  • 1000:$1.6600
  • 2500:$1.5800
  • 5000:$1.5200
FQH8N100C
DISTI # XSKDRABV0030457		ON Semiconductor 
RoHS: Compliant		648
  • 450:$2.2900
  • 648:$2.1300
FQH8N100C
DISTI # C1S541901511456		ON SemiconductorMOSFETs18
  • 10:$1.9500
  • 1:$2.8800
FQH8N100C
DISTI # C1S226600596019		ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		367
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # 2825207		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant		200
  • 1:£3.1000
  • 10:£2.4700
  • 100:£2.1500
  • 250:£1.8200
  • 500:£1.4800
FQH8N100C
DISTI # 2825207		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant		197
  • 1:$4.9000
  • 10:$4.2700
  • 100:$3.7000
  • 250:$3.3300
  • 500:$2.9200
  • 1000:$2.6400
Bild Teil # Beschreibung
MJE340STU

Mfr.#: MJE340STU

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OMO.#: OMO-BZG04-150-M3-08

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IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1

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IRFBG20PBF

Mfr.#: IRFBG20PBF

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 MOSFET RECOMMENDED ALT 844-IRFBF20PBF
CRCW0805470RFKEA

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 Thick Film Resistors - SMD 1/8watt 470ohms 1% 100ppm
CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

OMO.#: OMO-CRCW0805470RFKEA-VISHAY-DALE

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Mfr.#: IRFBG20PBF

OMO.#: OMO-IRFBG20PBF-VISHAY

 MOSFET N-CH 1000V 1.4A TO-220AB
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1-INFINEON-TECHNOLOGIES

 MOSFET_(75V,120V(
BZG04-150-M3-08

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OMO.#: OMO-BZG04-150-M3-08-VISHAY

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Verfügbarkeit
Aktie:
900
Auf Bestellung:
2883
Menge eingeben:
Der aktuelle Preis von FQH8N100C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,14 $
3,14 $
10
2,67 $
26,70 $
100
2,31 $
231,00 $
250
2,20 $
550,00 $
500
1,97 $
985,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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