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SIHP21N65EF-GE3

SIHP21N65EF-GE3
Mfr. #:
SIHP21N65EF-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP21N65EF-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHP21N65EF-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHP21, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 21A 3-Pin TO-220AB
***ment14 APAC
MOSFET, N CH, 650V, 21A, TO-220AB-3
***i-Key
MOSFET N-CH 650V 21A TO-220AB
***ark
Mosfet, N Ch, 650V, 21A, To-220Ab-3
***ronik
N-CH 700V 21A 180mOhm TO-220AB
***
N-CH 650V TO-220AB
***nell
MOSFET, CANALE N, 650V, 21A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:208W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Teil # Mfg. Beschreibung Aktie Preis
SIHP21N65EF-GE3
DISTI # SIHP21N65EF-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 21A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		174In Stock
  • 100:$3.7749
  • 10:$4.6040
  • 1:$5.1600
SIHP21N65EF-GE3
DISTI # SIHP21N65EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 21A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP21N65EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.3900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.1900
  • 10000:$2.0900
SIHP21N65EF-GE3
DISTI # 78-SIHP21N65EF-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		1028
  • 1:$4.6900
  • 10:$3.8900
  • 100:$3.2000
  • 250:$3.1000
  • 500:$2.7800
  • 1000:$2.3500
SIHP21N65EF-GE3
DISTI # TMOS1217		Vishay IntertechnologiesN-CH 700V 21A 180mOhm TO-220AB
RoHS: Compliant		Stock DE - 20Stock US - 0
  • 1000:$2.7800
SIHP21N65EF-GE3
DISTI # 2400383		Vishay IntertechnologiesMOSFET, N CH, 650V, 21A, TO-220AB-3
RoHS: Compliant		448
  • 1:£3.9600
  • 10:£2.9500
  • 100:£2.4200
  • 250:£2.3500
  • 500:£2.1000
SIHP21N65EF-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3

    		 MOSFET 850V Vds; 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3-VISHAY

    		 E Series Power MOSFET TO-220AB, 235 m @ 10V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von SIHP21N65EF-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,52 $
    3,52 $
    10
    3,35 $
    33,49 $
    100
    3,17 $
    317,25 $
    500
    3,00 $
    1 498,15 $
    1000
    2,82 $
    2 820,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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