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FDMS0309AS

FDMS0309AS
Mfr. #:
FDMS0309AS
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET PT8 NCH 30/20V S PQF
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS0309AS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Dual
Handelsname:
PowerTrench-SyncFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS0309AS
Transistortyp:
2 N-channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.002402 oz
Tags
FDMS0309A, FDMS0309, FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ow.cn
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
***rchild Semiconductor
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Teil # Mfg. Beschreibung Aktie Preis
FDMS0309AS
DISTI # FDMS0309ASCT-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASDKR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASTR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2515
FDMS0309AS_SN00347
DISTI # FDMS0309AS_SN00347-ND		ON SemiconductorMOSFET N-CH
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS0309AS
    DISTI # FDMS0309AS    		ON SemiconductorTrans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0309AS)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.2639
    • 6000:$0.2619
    • 12000:$0.2579
    • 18000:$0.2549
    • 30000:$0.2489
    FDMS0309AS
    DISTI # 68X0370    		ON SemiconductorPT8 NCH 30/20V S PQF / REEL0
    • 24000:$0.2140
    • 9000:$0.2210
    • 1:$0.2290
    FDMS0309AS
    DISTI # 512-FDMS0309AS    		ON SemiconductorMOSFET PT8 NCH 30/20V S PQF
    RoHS: Compliant    		8995
    • 1:$0.5900
    • 10:$0.4890
    • 100:$0.3160
    • 1000:$0.2530
    • 3000:$0.2130
    • 9000:$0.2060
    • 24000:$0.1980
    Bild Teil # Beschreibung
    SSM3K72CFS,LF

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    BSS138LT1G

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    CSD16403Q5A

    Mfr.#: CSD16403Q5A

    OMO.#: OMO-CSD16403Q5A

    		 MOSFET N-Ch NexFET Power MOSFETs
    NDS331N

    Mfr.#: NDS331N

    OMO.#: OMO-NDS331N

    		 MOSFET N-Ch LL FET Enhancement Mode
    FDS8878

    Mfr.#: FDS8878

    OMO.#: OMO-FDS8878

    		 MOSFET 30V N-Ch PowerTrench MOSFET
    CSD17578Q5A

    Mfr.#: CSD17578Q5A

    OMO.#: OMO-CSD17578Q5A

    		 MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 9.3mOhm 8-VSONP
    MCP73213T-A6SI/MF

    Mfr.#: MCP73213T-A6SI/MF

    OMO.#: OMO-MCP73213T-A6SI-MF

    		 Battery Management Dual cell OVP battery charger
    LTC2944IDD#PBF

    Mfr.#: LTC2944IDD#PBF

    OMO.#: OMO-LTC2944IDD-PBF

    		 Battery Management 60V Battery Gas Gauge with Voltage, Current & Temperature Measurement
    CMT-8540S-SMT-TR

    Mfr.#: CMT-8540S-SMT-TR

    OMO.#: OMO-CMT-8540S-SMT-TR

    		 Speakers & Transducers Buzzer 8.5mm sq 4kHz 5V SMT
    CMT-8540S-SMT-TR

    Mfr.#: CMT-8540S-SMT-TR

    OMO.#: OMO-CMT-8540S-SMT-TR-CUI

    		 BUZZER, 8.5 MM SQUARE, 4 MM DE
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von FDMS0309AS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,75 $
    0,75 $
    10
    0,63 $
    6,30 $
    100
    0,41 $
    40,60 $
    1000
    0,32 $
    325,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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