SI5475DC

SI5475DC
Mfr. #:
SI5475DC
Hersteller:
Vishay Intertechnologies
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5475DC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI5475DC, SI5475D, SI5475, SI547, SI54, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:7.6A; On Resistance, Rds(on):0.054ohm; Package/Case:1206-8; Termination Type:SMD; Power Dissipation, Pd:1.3W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, 1206-8; Transistor Polarity:P Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:12V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-450mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:ChipFET; Current Id Max:7.6A; On State Resistance @ Vgs = 1.8V:54mohm; On State Resistance @ Vgs = 2.5V:41mohm; On State Resistance @ Vgs = 4.5V:31mohm; P Channel Gate Charge:19nC; Package / Case:1206-8 ChipFET; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:20A; SMD Marking:BF; Termination Type:SMD; Voltage Vds:12V; Voltage Vds Typ:-12V; Voltage Vgs Max:-450mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.8V
Teil # Mfg. Beschreibung Aktie Preis
SI5475DC-T1-E3
DISTI # SI5475DC-T1-E3-ND
Vishay SiliconixMOSFET P-CH 12V 5.5A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI5475DC-T1-GE3
    DISTI # SI5475DC-T1-GE3-ND
    Vishay SiliconixMOSFET P-CH 12V 5.5A 1206-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    Limited Supply - Call
      SI5475DC-T1-E3
      DISTI # 781-SI5475DC-E3
      Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5475DDC-T1-GE3
      RoHS: Compliant
      0
        SI5475DC-T1
        DISTI # 781-SI5475DC
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5475DDC-T1-GE3
        RoHS: Not compliant
        0
          SI5475DC-T1-GE3
          DISTI # 781-SI5475DC-GE3
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5475DDC-T1-GE3
          RoHS: Compliant
          0
            SI5475DC-T1Vishay Siliconix 7110
              SI5475DC-T1Vishay IntertechnologiesTRANSISTOR2248
              • 1380:$0.5075
              • 277:$0.5800
              • 1:$1.4500
              Bild Teil # Beschreibung
              SI5457DC-T1-GE3

              Mfr.#: SI5457DC-T1-GE3

              OMO.#: OMO-SI5457DC-T1-GE3

              MOSFET -20V Vds 12V Vgs 1206-8 ChipFET
              SI5486DU-T1-GE3

              Mfr.#: SI5486DU-T1-GE3

              OMO.#: OMO-SI5486DU-T1-GE3

              MOSFET RECOMMENDED ALT 78-SI5442DU-T1-GE3
              SI5463EDC-T1-E3

              Mfr.#: SI5463EDC-T1-E3

              OMO.#: OMO-SI5463EDC-T1-E3

              MOSFET RECOMMENDED ALT 78-SI5457DC-T1-GE3
              SI54-220K

              Mfr.#: SI54-220K

              OMO.#: OMO-SI54-220K-1190

              Neu und Original
              SI5401DC-T1-GE3

              Mfr.#: SI5401DC-T1-GE3

              OMO.#: OMO-SI5401DC-T1-GE3-VISHAY

              MOSFET P-CH 20V 5.2A 1206-8
              SI54090-B01AGT

              Mfr.#: SI54090-B01AGT

              OMO.#: OMO-SI54090-B01AGT-1190

              Neu und Original
              SI544

              Mfr.#: SI544

              OMO.#: OMO-SI544-1190

              Neu und Original
              SI5445DC-T1

              Mfr.#: SI5445DC-T1

              OMO.#: OMO-SI5445DC-T1-1190

              5200 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
              SI5499DC-T1

              Mfr.#: SI5499DC-T1

              OMO.#: OMO-SI5499DC-T1-1190

              Neu und Original
              SI5449DC-T1-GE3

              Mfr.#: SI5449DC-T1-GE3

              OMO.#: OMO-SI5449DC-T1-GE3-VISHAY

              MOSFET P-CH 30V 3.1A 1206-8
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1000
              Menge eingeben:
              Der aktuelle Preis von SI5475DC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
              Referenzpreis (USD)
              Menge
              Stückpreis
              ext. Preis
              1
              0,00 $
              0,00 $
              10
              0,00 $
              0,00 $
              100
              0,00 $
              0,00 $
              500
              0,00 $
              0,00 $
              1000
              0,00 $
              0,00 $
              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
              Beginnen mit
              Top