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2N6123

2N6123
Mfr. #:
2N6123
Hersteller:
Central Semiconductor
Beschreibung:
Bipolar Transistors - BJT NPN Med Pwr
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N6123 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N6123 Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Zentraler Halbleiter
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Polarität des Transistors:
NPN
Kollektor- Emitterspannung VCEO Max:
80 V
Kollektor- Basisspannung VCBO:
80 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
1.4 V
Maximaler DC-Kollektorstrom:
4 A
Bandbreitenprodukt fT gewinnen:
2.5 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N6123
Verpackung:
Schüttgut
Marke:
Zentraler Halbleiter
Kontinuierlicher Kollektorstrom:
0.45 A
DC-Kollektor/Basisverstärkung hfe Min:
7 at 4 A, 2 V
Pd - Verlustleistung:
40 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
400
Unterkategorie:
Transistoren
Teil # Aliase:
2N6123 PBFREE
Gewichtseinheit:
0.081130 oz
Tags
2N612, 2N61, 2N6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor GP BJT NPN 80V 4A 3-Pin TO-220
***nell
TRANSISTOR,NPN,4A,80V,TO220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 2.5MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C
***ark
BIPOLAR TRANSISTOR, NPN, 80V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2.5MHzRoHS Compliant: Yes
***ure Electronics
TIP Series NPN 2 W 100 V 6 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
***eco
Transistor TIP41 NPN Medium Power Linear Switch 100V 6A TO-220
***roFlash
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 100V 6A 2000mW 3-Pin(3+Tab) TO-220 Tube
***nell
TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 65W; DC Collector Current: 6A; DC Current Gain hFE: 15hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
***Yang
Transistor GP BJT PNP 100V 1A 3-Pin TO-220AB Rail - Rail/Tube
***ure Electronics
TIP30C Series 100 V 1 A PNP Flange Mount Epitaxial Silicon Transistor - TO-220-3
***emi
1.0 A, 100 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***el Electronic
Bipolar Transistors - BJT PNP Epitaxial Sil
***eco
Transistor General Purpose BJT PNP 100 Volt 3 Amp 3-Pin 3+ Tab TO-220 Rail
***ure Electronics
TIP Series PNP 2 W 100 V 3 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
***Yang
Transistor GP BJT PNP 100V 3A 3-Pin TO-220AB Rail - Rail/Tube
***roFlash
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ter Electronics
100V, 3A PNP Epitaxial Silicon Transistor
***ure Electronics
D45H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
***enic
80V 50W 10A 40@4A1V 1V@8A400mA PNP +150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
***Yang
Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Gen Pur Switch
***icroelectronics SCT
Power Bipolar, PNP, 1V, 400mA, TO-220, Tube
***ponent Stockers USA
10 A 80 V PNP Si POWER TRANSISTOR TO-220AB
***ark
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:10A; Power Dissipation Pd:50W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe; Msl:- Rohs Compliant: Yes
***ure Electronics
D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
***enic
80V 50W 10A 40@4A1V 1V@8A400mA NPN +150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***Yang
Trans GP BJT NPN 80V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube
*** Electronic Components
Bipolar Transistors - BJT NPN Gen Pur Switch
***icroelectronics SCT
Power Bipolar, NPN, 1V, 400mA, TO-220, Tube
***ment14 APAC
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
***ure Electronics
TIP121 Series 80 V 5 A NPN Complementary Power Darlington Transistor TO-220-3
***roFlash
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ical
Trans Darlington NPN 80V 5A 2000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics SCT
Power Bipolar, NPN, 3V, 12mA, TO-220, Tube
***ark
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:5A; Power Dissipation Pd:65W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:1000Hfe; Msl:- Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2N6123
DISTI # 2N6123-ND		Central Semiconductor CorpTRANS NPN 80V 4A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		133In Stock
  • 5200:$0.9856
  • 2800:$0.9979
  • 800:$1.1679
  • 400:$1.4784
  • 25:$1.8480
  • 10:$2.0700
  • 1:$2.2900
2N6123
DISTI # 2N6123		Central Semiconductor CorpBipolar Power Transistor NPN Amplifier/Switch 80V 4A 3-Pin TO-220 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N6123)
RoHS: Not Compliant
Min Qty: 400
Container: Box		Americas - 0
    2N612340
    DISTI # 2N612340    		Renesas Electronics Corporation- Bulk (Alt: 2N612340)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Bulk    		Americas - 0
    • 10000:$0.3019
    • 5000:$0.3060
    • 3000:$0.3149
    • 2000:$0.3242
    • 1000:$0.3342
    2N6123
    DISTI # 33C8316    		NTE Electronics IncTRANSISTOR NPN SILICON BVCEO=80V IC=4A TO-220 CASE FOR POWER AMPLIFIER AND SWITCHING APPLICATIONS54
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.4000
    • 50:$1.5000
    • 1:$1.6400
    2N6123
    DISTI # 01H1387    		SPC MulticompBIPOLAR TRANSISTOR, NPN, 80V TO-220,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2.5MHz,Power Dissipation Pd:40W,DC Collector Current:4A,DC Current Gain hFE:100hFE,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1:$0.2560
    • 10:$0.2560
    • 50:$0.2560
    • 100:$0.2560
    • 500:$0.2560
    • 1000:$0.2560
    • 5000:$0.2560
    • 10000:$0.2560
    2N6123Central Semiconductor Corp80 V 4 A 40 W NPN Through Hole Silicon Power Transistor - TO-220-3
    RoHS: Compliant    		399Bag
    • 400:$0.8650
    • 800:$0.8250
    2N6123
    DISTI # 610-2N6123    		Central Semiconductor CorpBipolar Transistors - BJT NPN Med Pwr
    RoHS: Compliant    		344
    • 1:$1.9700
    • 10:$1.7600
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    • 2500:$0.9510
    • 5000:$0.9160
    2N6123NTE Electronics Inc 
    RoHS: Not Compliant    		54 Factory Stock
    • 50:$1.1200
    • 100:$0.8600
    • 200:$0.8000
    • 500:$0.7500
    2N612340Harris Semiconductor 
    RoHS: Not Compliant    		150
    • 1000:$0.3300
    • 500:$0.3500
    • 100:$0.3600
    • 25:$0.3800
    • 1:$0.4100
    2N6123Motorola Semiconductor Products*** FREE SHIPPING ORDERS OVER $100 *** Bipolar Junction Transistor, NPN Type, TO-220AB16
    • 15:$1.5000
    • 3:$1.8000
    • 1:$2.4000
    2N6123Harris Semiconductor 153
      2N6123Motorola Semiconductor Products 28
      • 3:$1.8000
      • 13:$1.3500
      2N6123
      DISTI # 1862520      		SPC MulticompTRANSISTOR,NPN,4A,80V,TO220
      RoHS: Compliant      		17
      • 1000:$0.8890
      • 500:$0.9170
      • 250:$1.0100
      • 1:$1.2800
      2N6123
      DISTI # 1862520      		SPC MulticompTRANSISTOR,NPN,4A,80V,TO22037
      • 500:£0.5760
      • 250:£0.8060
      • 100:£1.1500
      • 25:£1.6100
      • 5:£2.0100
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      Verfügbarkeit
      Aktie:
      339
      Auf Bestellung:
      2322
      Menge eingeben:
      Der aktuelle Preis von 2N6123 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,97 $
      1,97 $
      10
      1,76 $
      17,60 $
      100
      1,40 $
      140,00 $
      500
      1,23 $
      615,00 $
      1000
      1,02 $
      1 020,00 $
      2500
      0,95 $
      2 377,50 $
      5000
      0,92 $
      4 580,00 $
      10000
      0,88 $
      8 800,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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