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SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3
Mfr. #:
SI6562CDQ-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N/P-CH 20V 6.7A 8-TSSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI6562CDQ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI6562CDQ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI6562CDQ-GE3
Gewichtseinheit
0.005573 oz
Montageart
SMD/SMT
Paket-Koffer
8-TSSOP (0.173", 4.40mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-TSSOP
Aufbau
Dual Dual Source
FET-Typ
N- und P-Kanal
Leistung max
1.6W, 1.7W
Transistor-Typ
1 N-Channel 1 P-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
850pF @ 10V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
6.7A, 6.1A
Rds-On-Max-Id-Vgs
22 mOhm @ 5.7A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Lade-Qg-Vgs
23nC @ 10V
Pd-Verlustleistung
1.1 W 1.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns 25 ns
Anstiegszeit
10 ns 25 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
5.7 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
18 mOhms 24 mOhms
Transistor-Polarität
N-Kanal P-Kanal
Typische-Ausschaltverzögerungszeit
25 nS 45 nS
Typische-Einschaltverzögerungszeit
12 nS 30 nS
Kanal-Modus
Erweiterung
Tags
SI6562CDQ-T, SI6562CDQ, SI6562C, SI656, SI65, SI6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
***ical
Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R
***ark
Mosfet, N & P Channel, 20V, 6.7A, Tssop-8, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:surface Mountrohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3025In Stock
  • 1000:$0.5013
  • 500:$0.6350
  • 100:$0.8189
  • 10:$1.0360
  • 1:$1.1700
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3025In Stock
  • 1000:$0.5013
  • 500:$0.6350
  • 100:$0.8189
  • 10:$1.0360
  • 1:$1.1700
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4543
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6562CDQ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.4289
  • 6000:$0.4159
  • 12000:$0.3989
  • 18000:$0.3879
  • 30000:$0.3779
SI6562CDQ-T1-GE3
DISTI # 26T3807		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Product that comes on tape, but is not reeled (Alt: 26T3807)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0400
  • 25:$0.8500
  • 50:$0.7510
  • 100:$0.6520
  • 250:$0.6070
  • 500:$0.5610
  • 1000:$0.4430
SI6562CDQ-T1-GE3
DISTI # 26T3807		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes0
  • 1000:$0.4430
  • 500:$0.5610
  • 250:$0.6070
  • 100:$0.6520
  • 50:$0.7510
  • 25:$0.8500
  • 1:$1.0400
SI6562CDQ-T1-GE3.
DISTI # 28AC2157		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Product Range:- RoHS Compliant: No3000
  • 30000:$0.3660
  • 18000:$0.3720
  • 12000:$0.3780
  • 6000:$0.3930
  • 3000:$0.4030
  • 1:$0.4130
SI6562CDQ-T1-GE3
DISTI # 781-SI6562CDQ-GE3		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
RoHS: Compliant		835
  • 1:$1.0400
  • 10:$0.8500
  • 100:$0.6520
  • 500:$0.5610
  • 1000:$0.4430
  • 3000:$0.4130
  • 6000:$0.3930
  • 9000:$0.3780
SI6562CDQ-T1-GE3Vishay IntertechnologiesSi6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
RoHS: Compliant		9000Reel
  • 3000:$0.4450
SI6562CDQ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
RoHS: Compliant		Americas - 12000
    SI6562CDQ-T1-GE3
    DISTI # 2458751    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-
    RoHS: Compliant    		0
    • 9000:$0.5990
    • 6000:$0.6220
    • 3000:$0.6540
    • 1000:$0.7020
    • 500:$0.8880
    • 100:$1.0400
    • 10:$1.3500
    • 1:$1.6500
    SI6562CDQ-T1-GE3
    DISTI # 2335341    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6
    RoHS: Compliant    		3038
    • 1000:$0.8120
    • 500:$0.8880
    • 100:$1.0400
    • 10:$1.3500
    • 1:$1.6500
    SI6562CDQ-T1-GE3
    DISTI # 2335341    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6
    RoHS: Compliant    		0
    • 500:£0.4330
    • 250:£0.4670
    • 100:£0.5020
    • 25:£0.6540
    • 5:£0.7310
    Bild Teil # Beschreibung
    SI6562CDQ-T1-GE3

    Mfr.#: SI6562CDQ-T1-GE3

    OMO.#: OMO-SI6562CDQ-T1-GE3

    		 MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
    SI6562CDQ-T1-GE3-CUT TAPE

    Mfr.#: SI6562CDQ-T1-GE3-CUT TAPE

    OMO.#: OMO-SI6562CDQ-T1-GE3-CUT-TAPE-1190

    		 Neu und Original
    SI6562CD

    Mfr.#: SI6562CD

    OMO.#: OMO-SI6562CD-1190

    		 Neu und Original
    SI6562CD-T1-GE3

    Mfr.#: SI6562CD-T1-GE3

    OMO.#: OMO-SI6562CD-T1-GE3-1190

    		 Neu und Original
    SI6562CDQ

    Mfr.#: SI6562CDQ

    OMO.#: OMO-SI6562CDQ-1190

    		 Neu und Original
    SI6562CDQ-T1-E3

    Mfr.#: SI6562CDQ-T1-E3

    OMO.#: OMO-SI6562CDQ-T1-E3-1190

    		 Neu und Original
    SI6562CDQ-T1-GE3

    Mfr.#: SI6562CDQ-T1-GE3

    OMO.#: OMO-SI6562CDQ-T1-GE3-VISHAY

    		 MOSFET N/P-CH 20V 6.7A 8-TSSOP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SI6562CDQ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,56 $
    0,56 $
    10
    0,53 $
    5,34 $
    100
    0,51 $
    50,63 $
    500
    0,48 $
    239,05 $
    1000
    0,45 $
    450,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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