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| PartNumber | SI6562CDQ-T1-GE3 | SI6562CDQ | SI6562CDQ-T1-E3 |
| Description | MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR | ||
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSSOP-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6.7 A, 6.1 A | - | - |
| Rds On Drain Source Resistance | 22 mOhms, 30 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 15 nC, 34 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.6 W, 1.7 W | - | - |
| Configuration | Dual | Dual Dual Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SI6 | TrenchFETR | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 17 S, 22 S | - | - |
| Fall Time | 10 ns, 15 ns | 10 ns 25 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 25 ns | 10 ns 25 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns, 45 ns | 25 nS 45 nS | - |
| Typical Turn On Delay Time | 12 ns, 30 ns | 12 nS 30 nS | - |
| Part # Aliases | SI6562CDQ-GE3 | - | - |
| Unit Weight | 0.005573 oz | 0.005573 oz | - |
| Part Aliases | - | SI6562CDQ-GE3 | - |
| Package Case | - | 8-TSSOP (0.173", 4.40mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-TSSOP | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 1.6W, 1.7W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 850pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 6.7A, 6.1A | - |
| Rds On Max Id Vgs | - | 22 mOhm @ 5.7A, 4.5V | - |
| Vgs th Max Id | - | 1.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 23nC @ 10V | - |
| Pd Power Dissipation | - | 1.1 W 1.2 W | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 5.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 18 mOhms 24 mOhms | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6562CDQ-T1-GE3 | MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR | |
| SI6562CDQ-T1-GE3-CUT TAPE | Neu und Original | ||
| SI6562CDQ | Neu und Original | ||
| SI6562CDQ-T1-E3 | Neu und Original | ||
Vishay |
SI6562CDQ-T1-GE3 | MOSFET N/P-CH 20V 6.7A 8-TSSOP |