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FCP190N60E

FCP190N60E
Mfr. #:
FCP190N60E
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-CHAN MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCP190N60E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCP190N60E Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
20.6 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Qg - Gate-Ladung:
63 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Handelsname:
SuperFET II
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FCP190N60E
Transistortyp:
1 N-Channel
Typ:
600 V N-Channel MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
101 ns
Typische Einschaltverzögerungszeit:
23 ns
Gewichtseinheit:
0.063493 oz
Tags
FCP190N60, FCP190, FCP19, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**i
    E**i
    ES

    Ok, waiting to prove it.

    2019-06-19
    D***v
    D***v
    RU

    Works fine

    2019-06-21
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 ON Semiconductor FCP190N60E
***ure Electronics
Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3
***p One Stop Global
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 20.6A, TO-220
***i-Key
MOSFET N-CH 600V TO-220-3
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FCP190N60E
DISTI # V99:2348_06359354		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 8000000:$1.2610
  • 80000:$1.4240
  • 800:$1.7330
FCP190N60E
DISTI # FCP190N60E-ND		ON SemiconductorMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.7325
FCP190N60E
DISTI # 31262210		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 5:$1.7330
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.1900
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
FCP190N60E
DISTI # 512-FCP190N60E		ON SemiconductorMOSFET 600V N-CHAN MOSFET
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
FCP190N60E
DISTI # 7729102P		ON SemiconductorMOSFET N-CH 600V 20A SUPERFET-II TO220, TU10
  • 20:£1.3700
FCP190N60EON Semiconductor600 V N-CHANNEL MOSFET
RoHS: Compliant		Europe - 400
    FCP190N60E
    DISTI # C1S541901518194    		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		800
    • 800:$1.7330
    FCP190N60E
    DISTI # 2254234    		ON SemiconductorMOSFET, N-CH, 600V, 20.6A, TO-220
    RoHS: Compliant    		0
    • 1:£2.8400
    • 25:£2.5600
    • 100:£2.4100
    • 250:£2.2800
    • 500:£2.1000
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    Verfügbarkeit
    Aktie:
    255
    Auf Bestellung:
    2238
    Menge eingeben:
    Der aktuelle Preis von FCP190N60E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,69 $
    2,69 $
    10
    2,28 $
    22,80 $
    100
    1,83 $
    183,00 $
    500
    1,60 $
    800,00 $
    1000
    1,32 $
    1 320,00 $
    2500
    1,31 $
    3 275,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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