IPT65R105G7XTMA1

IPT65R105G7XTMA1
Mfr. #:
IPT65R105G7XTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPT65R105G7XTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPT65R105G7XTMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSOF-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
105 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.4 mm
Länge:
10.58 mm
Serie:
CoolMOS G7
Transistortyp:
1 N-Channel
Breite:
10.1 mm
Marke:
Infineon-Technologien
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
IPT65R105G7 SP001456204
Tags
IPT65R10, IPT65R1, IPT65, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
***ark
Mosfet, N-Ch, 650V, 24A, 156W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.091Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 650V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW. | Summary of Features: Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G; Enables best-in-class R DS(on) in smallest footprint | Benefits: FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS C7 enabling faster switching leading to higher efficiency; Power density trough BIC 33m in 115mm 2 TOLL footprint; Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use; TOLL package is easy to use and has the highest quality standards; Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible | Target Applications: SMPS; Telecom; Server; Solar
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPT65R105G7XTMA1
DISTI # V72:2272_16141107
Infineon Technologies AGTrans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
1872
  • 1000:$2.8580
  • 500:$3.0090
  • 250:$3.1600
  • 100:$3.5110
  • 25:$3.9010
  • 10:$4.9320
  • 1:$6.1380
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1CT-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1620In Stock
  • 1000:$3.3381
  • 500:$3.9581
  • 100:$4.6495
  • 10:$5.6750
  • 1:$6.3200
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1DKR-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1620In Stock
  • 1000:$3.3381
  • 500:$3.9581
  • 100:$4.6495
  • 10:$5.6750
  • 1:$6.3200
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1TR-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.0789
IPT65R105G7XTMA1
DISTI # 31348332
Infineon Technologies AGTrans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
2000
  • 2000:$2.7614
IPT65R105G7XTMA1
DISTI # 26196666
Infineon Technologies AGTrans MOSFET N-CH 650V 24A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
1872
  • 3:$6.1380
IPT65R105G7XTMA1
DISTI # SP001456204
Infineon Technologies AGTrans MOSFET N 700V 24A 8-Pin HSOF T/R (Alt: SP001456204)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 2000
  • 20000:€2.4900
  • 12000:€2.6900
  • 8000:€2.7900
  • 4000:€3.0900
  • 2000:€3.8900
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1
Infineon Technologies AGTrans MOSFET N 700V 24A 8-Pin HSOF T/R - Bulk (Alt: IPT65R105G7XTMA1)
Min Qty: 124
Container: Bulk
Americas - 0
  • 1240:$2.4900
  • 620:$2.5900
  • 372:$2.6900
  • 248:$2.7900
  • 124:$2.8900
IPT65R105G7XTMA1
DISTI # IPT65R105G7XTMA1
Infineon Technologies AGTrans MOSFET N 700V 24A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT65R105G7XTMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
    IPT65R105G7XTMA1
    DISTI # 84AC6845
    Infineon Technologies AGMOSFET, N-CH, 650V, 24A, 156W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.091ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes449
    • 1000:$3.1100
    • 500:$3.7000
    • 250:$4.1200
    • 100:$4.3400
    • 50:$4.5700
    • 25:$4.7900
    • 10:$5.0100
    • 1:$5.8900
    IPT65R105G7XTMA1
    DISTI # 726-IPT65R105G7XTMA1
    Infineon Technologies AGMOSFET
    RoHS: Compliant
    3157
    • 1:$5.8300
    • 10:$4.9600
    • 100:$4.3000
    • 250:$4.0800
    • 500:$3.6600
    • 1000:$3.0800
    • 2000:$2.9300
    IPT65R105G7XTMA1Infineon Technologies AGPower Field-Effect Transistor
    RoHS: Not Compliant
    2000
    • 1000:$2.6600
    • 500:$2.8000
    • 100:$2.9100
    • 25:$3.0400
    • 1:$3.2700
    IPT65R105G7XTMA1
    DISTI # 2983375
    Infineon Technologies AGMOSFET, N-CH, 650V, 24A, 156W, HSOF409
    • 500:£2.6600
    • 250:£2.9500
    • 100:£3.1300
    • 10:£3.5900
    • 1:£4.6700
    IPT65R105G7XTMA1
    DISTI # XSKDRABV0021273
    Infineon Technologies AG 
    RoHS: Compliant
    6000 in Stock0 on Order
    • 6000:$3.8600
    • 2000:$4.1400
    IPT65R105G7XTMA1
    DISTI # 2983375
    Infineon Technologies AGMOSFET, N-CH, 650V, 24A, 156W, HSOF
    RoHS: Compliant
    349
    • 1000:$4.4200
    • 500:$4.7700
    • 250:$5.3200
    • 100:$5.6000
    • 10:$6.4700
    • 1:$8.4000
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    OMO.#: OMO-LNK3204G-TL-POWER-INTEGRATIONS

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    T435T-600FP

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    OMO.#: OMO-T435T-600FP-STMICROELECTRONICS

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IPT65R105G7XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,83 $
    5,83 $
    10
    4,96 $
    49,60 $
    100
    4,30 $
    430,00 $
    250
    4,08 $
    1 020,00 $
    500
    3,66 $
    1 830,00 $
    1000
    3,08 $
    3 080,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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