 | | |
| PartNumber | IPT65R105G7XTMA1 | IPT65R195G7XTMA1 |
| Description | MOSFET | MOSFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | HSOF-8 | HSOF-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 24 A | 14 A |
| Rds On Drain Source Resistance | 105 mOhms | 424 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 30 V |
| Qg Gate Charge | 35 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 156 W | 97 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 2.4 mm | 2.4 mm |
| Length | 10.58 mm | 10.58 mm |
| Series | CoolMOS G7 | CoolMOS G7 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 10.1 mm | 10.1 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 7 ns | 9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7 ns | 5 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 68 ns | 46 ns |
| Typical Turn On Delay Time | 13 ns | 9 ns |
| Part # Aliases | IPT65R105G7 SP001456204 | IPT65R195G7 SP001456206 |
| Unit Weight | - | 0.027112 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPT65R105G7XTMA1 | MOSFET | |
| IPT65R195G7XTMA1 | MOSFET | ||
| IPT65R195G7XTMA1 | HIGH POWER_NEW | ||
| IPT65R105G7XTMA1 | HIGH POWER_NEW | ||
| IPT65R195G7XTMA1 65R195G7 | Neu und Original | ||
| IPT65R105G7XTMA1 65R105G7 | Neu und Original | ||
| IPT65R105G7 | Neu und Original |