SKM200GAR125D

Mfr. #:: SKM200GAR125D
Hersteller:: SEMIKRON
Beschreibung:: SEMITRANS, 1200V, 200A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SKM200GAR125D Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: SEMIKRON

Produktkategorie: Modul

Tags: SKM200GAR12, SKM200GAR1, SKM200GAR, SKM200GA, SKM200G, SKM200, SKM20, SKM2, SKM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKM200GAR125D Beschreibung

***ark: TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,200A I(C)

***et Europe: Trans IGBT Module N-CH 1.2KV 200A 7-Pin Case D-58

***ikron: Features: N channel , homogeneous Si Low inductance case Short tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (13 mm) and creepage distance (20 mm) Typical Applications: Switched mode power supplies at f sw > 20 kHz Resonant inverters up to 100 kHz Inductive heating Electronic welders at f sw > 20 kHz

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 400A 2400000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT, MODULE, N-CH, 1.2KV, 400A; Transistor Polarity: N Channel; DC Collector Current: 400A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transis

***ark: IGBT MOD, N-CH, 1.2KV, 400A, 2.4KW; Continuous Collector Current:400A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:2.4kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

*** Stop Electro: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SKM200GAR125D DISTI # 71043269	SEMIKRON	SEMITRANS,1200V,200A RoHS: Compliant	0	1:$179.3000 12:$170.0200 48:$159.0600 96:$149.4100 144:$140.8700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SKM200GAH123DKL11 OMO.#: OMO-SKM200GAH123DKL11-1190	Neu und Original
	Mfr.#: SKM200GAH126DKL OMO.#: OMO-SKM200GAH126DKL-1190	Neu und Original
	Mfr.#: SKM200GAL123DKL OMO.#: OMO-SKM200GAL123DKL-1190	Neu und Original
	Mfr.#: SKM200GAL125D OMO.#: OMO-SKM200GAL125D-1190	SEMITRANS, 1200V, 200A
	Mfr.#: SKM200GAL173D OMO.#: OMO-SKM200GAL173D-1190	POWER IGBT TRANSISTOR
	Mfr.#: SKM200GAR125D OMO.#: OMO-SKM200GAR125D-1190	SEMITRANS, 1200V, 200A
	Mfr.#: SKM200GB124DE OMO.#: OMO-SKM200GB124DE-1190	Neu und Original
	Mfr.#: SKM200GB126D OMO.#: OMO-SKM200GB126D-1190	SEMITRANS, 1200V, 200A
	Mfr.#: SKM200GB128DE OMO.#: OMO-SKM200GB128DE-1190	Neu und Original
	Mfr.#: SKM200GB12V OMO.#: OMO-SKM200GB12V-1190	IGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von SKM200GAR125D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~211,30 $~~; ~~211,30 $~~

10: ~~200,74 $~~; ~~2 007,40 $~~

100: ~~190,17 $~~; ~~19 017,45 $~~

500: ~~179,61 $~~; ~~89 804,65 $~~

1000: ~~169,04 $~~; ~~169 044,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SKM200GAR125D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes