SI1016X-T1-GE3

Mfr. #:: SI1016X-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N/P-CH 20V SC89-6
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1016X-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Arrays

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI1016X-GE3

Gewichtseinheit: 0.001129 oz

Montageart: SMD/SMT

Handelsname: TrenchFET

Paket-Koffer: SOT-563, SOT-666

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: SC-89-6

Aufbau: N-Kanal P-Kanal

FET-Typ: N- und P-Kanal

Leistung max: 250mW

Transistor-Typ: 1 N-Channel 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 485mA, 370mA

Rds-On-Max-Id-Vgs: 700 mOhm @ 600mA, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 0.75nC @ 4.5V

Pd-Verlustleistung: 250 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Vgs-Gate-Source-Spannung: 6 V

ID-Dauer-Drain-Strom: 600 mA

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Widerstand: 410 mOhms 800 mOhms

Transistor-Polarität: N-Kanal P-Kanal

Kanal-Modus: Erweiterung

Tags: SI1016X-T, SI1016X, SI1016, SI101, SI10, SI1

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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1016X-T1-GE3 Beschreibung

***ure Electronics: N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6

*** Source Electronics: MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, SC-89; Tra; DUAL N/P CHANNEL MOSFET, 20V, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:485mA; Continuous Drain Current Id, P Channel:-370mA; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, N & P CH, 20V, 0.485A, SOT-563; Transistor Polarity:N and P Channel; Continuous Drain Current Id:485mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:380mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V SC89-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	38255In Stock	1000:$0.1926 500:$0.2493 100:$0.3399 10:$0.4530 1:$0.5400
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V SC89-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	38255In Stock	1000:$0.1926 500:$0.2493 100:$0.3399 10:$0.4530 1:$0.5400
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V SC89-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	3000:$0.1705
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Cut TR (SOS) (Alt: SI1016X-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 2999	1:$0.4649 30:$0.4389 75:$0.3659 150:$0.3289 375:$0.2709 750:$0.2049 1500:$0.1859
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: SI1016X-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1449 6000:$0.1409 12000:$0.1349 18000:$0.1309 30000:$0.1279
SI1016X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI1016X-T1-GE3 DISTI # 73W9405	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: 73W9405) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	1:$0.1500 6000:$0.1450 12000:$0.1360 18000:$0.1330 30000:$0.1290
SI1016X-T1-GE3 DISTI # 73W9405	Vishay Intertechnologies	MOSFET, N AND P CHANNEL, 20V, 0.41OHM, 485mA, SOT-563, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes	9000	1:$0.1550 3000:$0.1500 6000:$0.1450 12000:$0.1360 18000:$0.1330 30000:$0.1290
SI1016X-T1-GE3 DISTI # 16P3672	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 20V, SC-89,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.4800 25:$0.3620 50:$0.3160 100:$0.2690 250:$0.2450 500:$0.2210 1000:$0.1710
SI1016X-T1-GE3. DISTI # 16AC0247	Vishay Intertechnologies	Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V,Power Dissipation Pd:250mW,No. of Pins:6PinsRoHS Compliant: No	0	1:$0.1580 3000:$0.1530 6000:$0.1450 12000:$0.1360 18000:$0.1330 30000:$0.1290
SI1016X-T1-GE3 DISTI # 70459639	Vishay Siliconix	N/P-Ch MOSFET 700/1200 [email protected] RoHS: Compliant	0	3000:$0.5370 6000:$0.3660
SI1016X-T1-GE3 DISTI # 781-SI1016X-T1-GE3	Vishay Intertechnologies	MOSFET N/P-Ch MOSFET 700/1200 [email protected] RoHS: Compliant	24855	1:$0.4800 10:$0.3620 100:$0.2690 500:$0.2210 1000:$0.1710 3000:$0.1550 6000:$0.1450 9000:$0.1360 24000:$0.1290
SI1016X-T1-GE3	Vishay Siliconix	485MA, 20V, 2 CHANNEL,N AND P-CHANNEL, SI, SMALL SIGNAL, MOSFET	80	38:$0.2025 15:$0.2700 1:$0.3600
SI1016X-T1-GE3 DISTI # XSFP00000119259	Vishay Siliconix	Zener Diode, 8.2V V(Z), 5%, 0.5W,Silicon,Unidirectional RoHS: Compliant	18000	3000:$0.4000 18000:$0.3636
SI1016X-T1-GE3	Vishay Intertechnologies	MOSFET N/P-Ch MOSFET 700/1200 [email protected] RoHS: Compliant	Americas - 6000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI1016X-T1-GE3 OMO.#: OMO-SI1016X-T1-GE3	MOSFET N/P-Ch MOSFET 700/1200 [email protected]
	Mfr.#: SI1016X-T1-E3 OMO.#: OMO-SI1016X-T1-E3	MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3
	Mfr.#: SI1016X OMO.#: OMO-SI1016X-1190	Neu und Original
	Mfr.#: SI1016X-T1 OMO.#: OMO-SI1016X-T1-1190	MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3
	Mfr.#: SI1016X-T1-E3 OMO.#: OMO-SI1016X-T1-E3-VISHAY	MOSFET N/P-CH 20V SOT563F
	Mfr.#: SI1016X-T1-GE3 OMO.#: OMO-SI1016X-T1-GE3-VISHAY	MOSFET N/P-CH 20V SC89-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von SI1016X-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,19 $~~; ~~0,19 $~~

10: ~~0,18 $~~; ~~1,82 $~~

100: ~~0,17 $~~; ~~17,27 $~~

500: ~~0,16 $~~; ~~81,55 $~~

1000: ~~0,15 $~~; ~~153,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI1016X-T 3
SI1016X 4
SI1016 8
SI101 86
SI10 423
SI1 1080

SI1016X-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes