FDMD85100

FDMD85100
Mfr. #:
FDMD85100
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors MOSFET 100V Dual N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMD85100 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
FDMD85100 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
FETs - Arrays
Serie
PowerTrenchR
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.008818 oz
Montageart
SMD/SMT
Paket-Koffer
8-PowerWDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-Power 5x6
Aufbau
Dual
FET-Typ
2 N-Channel (Half Bridge)
Leistung max
2.2W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
100V
Eingangskapazität-Ciss-Vds
2230pF @ 50V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
10.4A
Rds-On-Max-Id-Vgs
9.9 mOhm @ 10.4A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Lade-Qg-Vgs
31nC @ 10V
Pd-Verlustleistung
50 W 50 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
4.2 ns 4.4 ns
Anstiegszeit
5 ns 5.6 ns
Vgs-Gate-Source-Spannung
20 V 20 V
ID-Dauer-Drain-Strom
48 A 48 A
Vds-Drain-Source-Breakdown-Voltage
100 V 100 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V 2V
Rds-On-Drain-Source-Widerstand
18.7 mOhms 18.6 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
19 ns 18 ns
Typische-Einschaltverzögerungszeit
14 ns 12.5 ns
Qg-Gate-Ladung
22 nC 21 nC
Vorwärts-Transkonduktanz-Min
27 S 26 S
Kanal-Modus
Erweiterung
Tags
FDMD85, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL
***rchild Semiconductor
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDMD85100
DISTI # V72:2272_06337942
ON Semiconductor100V DUAL N-CHANNEL POWERTRENC2898
  • 1000:$1.4840
  • 500:$1.7360
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 1:$2.7030
FDMD85100
DISTI # FDMD85100CT-ND
ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5182In Stock
  • 1000:$1.6904
  • 500:$2.0043
  • 100:$2.4752
  • 10:$3.0190
  • 1:$3.3800
FDMD85100
DISTI # FDMD85100DKR-ND
ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5182In Stock
  • 1000:$1.6904
  • 500:$2.0043
  • 100:$2.4752
  • 10:$3.0190
  • 1:$3.3800
FDMD85100
DISTI # FDMD85100TR-ND
ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$1.5591
FDMD85100
DISTI # 27527757
ON Semiconductor100V DUAL N-CHANNEL POWERTRENC9000
  • 3000:$1.5590
FDMD85100
DISTI # 25975390
ON Semiconductor100V DUAL N-CHANNEL POWERTRENC2898
  • 1000:$1.4840
  • 500:$1.7360
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 5:$2.7030
FDMD85100
DISTI # FDMD85100
ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD85100)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
  • 30000:$1.2900
FDMD85100
DISTI # FDMD85100
ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R (Alt: FDMD85100)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€2.2900
  • 6000:€1.7900
  • 12000:€1.5900
  • 18000:€1.3900
  • 30000:€1.3900
FDMD85100
DISTI # 512-FDMD85100
ON SemiconductorMOSFET FET 100V 9.9 MOHM PQFN56
RoHS: Compliant
2807
  • 1:$2.8300
  • 10:$2.4000
  • 100:$2.0800
  • 250:$1.9800
  • 500:$1.7700
  • 1000:$1.5000
FDMD85100Fairchild Semiconductor CorporationPower Field-Effect Transistor
RoHS: Compliant
2101
  • 1000:$1.5500
  • 500:$1.6300
  • 100:$1.7000
  • 25:$1.7700
  • 1:$1.9100
FDMD85100
DISTI # C1S541901391436
ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R
RoHS: Compliant
2898
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 1:$2.7030
Bild Teil # Beschreibung
FDMD8440L

Mfr.#: FDMD8440L

OMO.#: OMO-FDMD8440L

MOSFET FET 40V 87A 2.6 mOhm
FDMD8560L

Mfr.#: FDMD8560L

OMO.#: OMO-FDMD8560L

MOSFET 60V Dual N-Channel PowerTrench MOSFET
FDMD8260LET60

Mfr.#: FDMD8260LET60

OMO.#: OMO-FDMD8260LET60

MOSFET 60V/20V Dual Nch Power Trench MOSFET
FDMD8240L

Mfr.#: FDMD8240L

OMO.#: OMO-FDMD8240L

MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET
FDMD85100

Mfr.#: FDMD85100

OMO.#: OMO-FDMD85100

MOSFET FET 100V 9.9 MOHM PQFN56
FDMD8260LET60

Mfr.#: FDMD8260LET60

OMO.#: OMO-FDMD8260LET60-ON-SEMICONDUCTOR

MOSFET 2N-CH 60V 15A
FDMD84100

Mfr.#: FDMD84100

OMO.#: OMO-FDMD84100-ON-SEMICONDUCTOR

MOSFET 2N-CH 100V 7A 8-PQFN
FDMD86100

Mfr.#: FDMD86100

OMO.#: OMO-FDMD86100-ON-SEMICONDUCTOR

MOSFET 2N-CH 100V
FDMD8240LET40

Mfr.#: FDMD8240LET40

OMO.#: OMO-FDMD8240LET40-ON-SEMICONDUCTOR

MOSFET 2N-CH 40V 24A POWER3.3X5
FDMD8900

Mfr.#: FDMD8900

OMO.#: OMO-FDMD8900-ON-SEMICONDUCTOR

MOSFET 2N-CH 30V POWER
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von FDMD85100 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,94 $
1,94 $
10
1,84 $
18,38 $
100
1,74 $
174,15 $
500
1,64 $
822,40 $
1000
1,55 $
1 548,00 $
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