BLF278

Mfr. #:: BLF278
Hersteller:: Advanced Semiconductor, Inc.
Beschreibung:: RF MOSFET Transistors RF Transistor
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BLF278 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Advanced Semiconductor, Inc.

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: Y

Technologie:: Si

Verpackung:: Tablett

Marke:: Advanced Semiconductor, Inc.

Produktart:: HF-MOSFET-Transistoren

Unterkategorie:: MOSFETs

Tags: BLF278, BLF27, BLF2, BLF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BLF278 Beschreibung

***ark: Rf Fet Transistor, 125 V, 18 A, 500 W, 400 Mhz, 520 Mhz, Sot-262A1 Rohs Compliant: Yes

***ical: Trans RF MOSFET N-CH 125V 18A 5-Pin CDFM

***ponent Stockers USA: 2 CHANNEL VHF BAND Si N-CHANNEL RF POWER MOSFET

*** Source Electronics: VHF push-pull power MOS transistor

***ment14 APAC: MOSFET, N, VHF, SOT-262; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:18A; Power Dissipation Pd:500W; Operating Frequency Range:400MHz to 520MHz; RF Transistor Case:SOT-262A1; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Junction Temperature Tj Max:200°C; On Resistance Rds(on):200mohm; Package / Case:SOT-262A1; Power Dissipation Max:500W; Power Dissipation Pd:500W; Power Dissipation Pd:500W; Rds(on) Test Voltage Vgs:10V; Storage Temperature Max:150°C; Storage Temperature Min:-65°C; Transistor Case Style:SOT-262A1; Transistor Polarity:N Channel; Voltage Vds:125V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2V

***ure Electronics: N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174

***roFlash: Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA

***nell: MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin

***(Formerly Allied Electronics): MOSFET, Power; P-Channel; 0.117 Ohms @ -10 V, -11 A; 20 V (Max.); 62 degC/W

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ter Electronics: MOSFET, P-CHANNEL, -100V, -23A, 117 MOHM, 64.7 NC QG, TO-220

***ure Electronics: Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3

***id Electronics: Transistor MOSFET P-Ch. -23A/-100V TO220 IRF 9540 N PBF

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 140 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ment14 APAC: MOSFET, P, -100V, -23A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:94W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-23A; Current Temperature:25°C; Device Marking:IRF9540N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State Resistance Max:117mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:76A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -100V, -21A, 117 mOhm, 64.7 nC Qg, TO-247AC

*** Source Electronics: Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) | MOSFET P-CH 100V 23A TO-247AC

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ure Electronics: Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-247AC

***roFlash: Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ment14 APAC: MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:120W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-23A; Package / Case:TO-247AC; Power Dissipation Pd:120W; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W

***ure Electronics: Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

***ow.cn: Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:20A; On-Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK RoHS Compliant: No

***nell: MOSFET, N, 100V, 18A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:18A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:110A; No. of Pins:3; Power Dissipation:42W; Power, Pd:42W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.8°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V

***emi: N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ

***ure Electronics: N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA

***nell: MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***th Star Micro: NTD6415ANL: Power MOSFET 100V 23A 56 mohm Single N-Channel DPAK Logic Level

***ure Electronics: Single N-Channel 100 V 83 W 20 nC Silicon Surface Mount Mosfet - TO-252-3

***ark: MOSFET, N-CH, 100V, 23A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 23A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BLF278,112 DISTI # 568-2412-ND	Ampleon	RF FET 2 NC 125V 22DB SOT262A1 RoHS: Compliant Min Qty: 60 Container: Tray	Limited Supply - Call
BLF278/01,112 DISTI # BLF278/01,112-ND	Ampleon	RF FET 2 NC 125V 22DB SOT262A1 RoHS: Compliant Min Qty: 60 Container: Tube	Limited Supply - Call
BLF278 DISTI # 01P3315	NXP Semiconductors	RF FET Transistor, 125 V, 18 A, 500 W, 400 MHz, 520 MHz, SOT-262A1 RoHS Compliant: Yes	0
BLF278/01,112 DISTI # 70R2767	NXP Semiconductors	BLF278/CDFM4/TUBE-BULK//01	0
BLF278,112 DISTI # 70R2768	NXP Semiconductors	N CHANNEL VHF PUSH / PULL POWER VDMOS, 50V, 108MHZ - 225MHZ, 5-SOT-262A1,Drain Source Voltage Vds:50V,Continuous Drain Current Id:18A,Power Dissipation Pd:500W,Operating Frequency Min:108MHz,Operating Frequency Max:225MHz,MSL:-RoHS Compliant: Yes	0
BLF278 DISTI # 974-BLF278	Advanced Semiconductor Inc	RF MOSFET Transistors RF Transistor RoHS: Compliant	0	1:$160.9800 10:$155.0000 25:$147.6500 50:$146.0000
BLF278	Advanced Semiconductor Inc	INSTOCK	2

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Verfügbarkeit

Aktie:: 23
Auf Bestellung:: 2006
Menge eingeben:

Der aktuelle Preis von BLF278 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~160,98 $~~; ~~160,98 $~~

10: ~~155,00 $~~; ~~1 550,00 $~~

25: ~~147,65 $~~; ~~3 691,25 $~~

50: ~~146,00 $~~; ~~7 300,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BLF278

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes