G10N120RUF

G10N120RUF
Mfr. #:
G10N120RUF
Hersteller:
ON Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
G10N120RUF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
G10N12, G10N1, G10N, G10
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
HGTG10N120BND
DISTI # HGTG10N120BND-ND
ON SemiconductorIGBT 1200V 35A 298W TO247
RoHS: Not compliant
Min Qty: 1
Container: Tube
787In Stock
  • 2700:$1.5302
  • 900:$1.9051
  • 450:$2.1232
  • 25:$2.5824
  • 10:$2.7310
  • 1:$3.0400
HGTG10N120BND
DISTI # HGTG10N120BND
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$1.2900
  • 450:$1.3900
  • 900:$1.3900
  • 1800:$1.3900
  • 2700:$1.3900
HGTG10N120BND
DISTI # HGTG10N120BND
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450
Asia - 0
  • 22500:$1.5580
  • 11250:$1.5840
  • 4500:$1.6386
  • 2250:$1.6971
  • 1350:$1.7600
  • 900:$1.8277
  • 450:$1.9008
HGTG10N120BND
DISTI # 98B1928
ON SemiconductorSINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
  • 500:$2.4200
  • 250:$2.6800
  • 100:$2.8100
  • 50:$2.9500
  • 25:$3.0800
  • 10:$3.2200
  • 1:$3.7700
HGTG10N120BND.
DISTI # 16AC0004
Fairchild Semiconductor CorporationDC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
  • 4500:$1.6900
  • 1:$1.7900
HGTG10N120BND
DISTI # 512-HGTG10N120BND
ON SemiconductorIGBT Transistors 35A 1200V N-Ch
RoHS: Compliant
641
  • 1:$3.6200
  • 10:$3.0700
  • 100:$2.6600
  • 250:$2.5300
  • 500:$2.2700
  • 1000:$1.9100
  • 2500:$1.8200
HGTG10N120BND_Q
DISTI # 512-HGTG10N120BND_Q
ON SemiconductorIGBT Transistors 35A 1200V N-Ch
RoHS: Not compliant
0
    HGTG10N120BNDON SemiconductorHGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
    RoHS: Compliant
    Min Qty: 10
    50Tube
    • 10:$2.2500
    • 50:$1.6000
    • 100:$1.5100
    • 250:$1.3900
    • 500:$1.3100
    G10N120BNHarris Semiconductor 20
      HGTG10N120BNHarris Semiconductor 45
        HGTG10N120BNDHarris Semiconductor 20
          HGTG10N120BNDHarris Semiconductor 23
            HGTG10N120BND
            DISTI # HGTG10N120BND
            ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,TO247-3203
            • 150:$2.1000
            • 30:$2.3200
            • 10:$2.6800
            • 3:$3.1500
            • 1:$3.5600
            HGTG10N120BNDFairchild Semiconductor Corporation 
            RoHS: Compliant
            Europe - 1130
              Bild Teil # Beschreibung
              G10N10

              Mfr.#: G10N10

              OMO.#: OMO-G10N10-1190

              Neu und Original
              G10N10A

              Mfr.#: G10N10A

              OMO.#: OMO-G10N10A-1190

              Neu und Original
              G10N120

              Mfr.#: G10N120

              OMO.#: OMO-G10N120-1190

              Neu und Original
              G10N120BN

              Mfr.#: G10N120BN

              OMO.#: OMO-G10N120BN-1190

              Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3
              G10N120BND

              Mfr.#: G10N120BND

              OMO.#: OMO-G10N120BND-1190

              Neu und Original
              G10N120CN

              Mfr.#: G10N120CN

              OMO.#: OMO-G10N120CN-1190

              Neu und Original
              G10N120CND

              Mfr.#: G10N120CND

              OMO.#: OMO-G10N120CND-1190

              Neu und Original
              G10N120RUF

              Mfr.#: G10N120RUF

              OMO.#: OMO-G10N120RUF-1190

              Neu und Original
              G10N120RUFD

              Mfr.#: G10N120RUFD

              OMO.#: OMO-G10N120RUFD-1190

              Neu und Original
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1000
              Menge eingeben:
              Der aktuelle Preis von G10N120RUF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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