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SISA18ADNT1GE3

SISA18ADNT1GE3
Mfr. #:
SISA18ADNT1GE3
Hersteller:
Vishay Intertechnologies
Beschreibung:
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA18ADNT1GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SISA18, SISA1, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27005In Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27005In Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.2387
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SISA18ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 6000
  • 3000:$0.2037
  • 6000:$0.1567
  • 9000:$0.1247
  • 15000:$0.1054
  • 30000:$0.0970
  • 75000:$0.0940
  • 150000:$0.0912
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA18ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2029
  • 6000:$0.1969
  • 12000:$0.1889
  • 18000:$0.1839
  • 30000:$0.1789
SISA18ADN-T1-GE3
DISTI # 19X1956		Vishay IntertechnologiesMOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V RoHS Compliant: Yes1873
  • 1000:$0.2390
  • 500:$0.3090
  • 250:$0.3430
  • 100:$0.3760
  • 50:$0.4190
  • 25:$0.4630
  • 10:$0.5060
  • 1:$0.6700
SISA18ADN-T1-GE3
DISTI # 99W9573		Vishay IntertechnologiesMOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V0
  • 50000:$0.1810
  • 30000:$0.1890
  • 20000:$0.2030
  • 10000:$0.2170
  • 5000:$0.2360
  • 1:$0.2410
SISA18ADN-T1-GE3
DISTI # 78-SISA18ADN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		8148
  • 1:$0.6700
  • 10:$0.5060
  • 100:$0.3760
  • 500:$0.3090
  • 1000:$0.2390
  • 3000:$0.2340
SISA18ADNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 2915
    SISA18ADN-T1-GE3
    DISTI # 2364101    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 38.3A, PPAK1212-8
    RoHS: Compliant    		1873
    • 500:£0.2360
    • 250:£0.2620
    • 100:£0.2880
    • 25:£0.4080
    • 5:£0.4370
    SISA18ADN-T1-GE3
    DISTI # 2364101    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 38.3A, PPAK1212-8
    RoHS: Compliant    		1873
    • 3000:$0.3710
    • 1000:$0.3780
    • 500:$0.4900
    • 100:$0.5960
    • 10:$0.8020
    • 1:$1.0700
    SISA18ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas - 3000
    • 3000:$0.1980
    • 6000:$0.1920
    • 12000:$0.1880
    • 24000:$0.1850
    Bild Teil # Beschreibung
    SISA18ADN-T1-GE3

    Mfr.#: SISA18ADN-T1-GE3

    OMO.#: OMO-SISA18ADN-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    SISA18ADNT1GE3

    Mfr.#: SISA18ADNT1GE3

    OMO.#: OMO-SISA18ADNT1GE3-1190

    		 Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    SISA18ADN-T1-GE3

    Mfr.#: SISA18ADN-T1-GE3

    OMO.#: OMO-SISA18ADN-T1-GE3-VISHAY

    		 MOSFET N-CH 30V 38.3A 1212-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SISA18ADNT1GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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