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IRF6626TR1

IRF6626TR1
Mfr. #:
IRF6626TR1
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6626TR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
N
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-ST
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
5.4 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
1.8 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
4.85 mm
Transistortyp:
1 N-Channel
Typ:
DirectFET-Leistungs-MOSFET
Breite:
3.95 mm
Marke:
Infineon / IR
Abfallzeit:
4.5 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SP001531662
Tags
IRF6626T, IRF6626, IRF662, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST T/R
***ment14 APAC
MOSFET, N, DIRECTFET, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.2W; Transistor Case Style:ST; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:2380pF; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:ST; Power Dissipation Pd:2.2W; Power Dissipation Pd:2.2W; Pulse Current Idm:16A; Reverse Recovery Time trr Typ:15ns; SMD Marking:6626; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Teil # Mfg. Beschreibung Aktie Preis
IRF6626TR1
DISTI # IRF6626TR1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6626TR1
    DISTI # IRF6626TR1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6626TR1PBF
      DISTI # IRF6626TR1PBFTR-ND      		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Limited Supply - Call
        IRF6626TR1PBF
        DISTI # IRF6626TR1PBFCT-ND        		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Limited Supply - Call
          IRF6626TR1PBF
          DISTI # IRF6626TR1PBFDKR-ND          		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
          RoHS: Compliant
          Min Qty: 1
          Container: Digi-Reel®          		Limited Supply - Call
            IRF6626TR1PBF
            DISTI # 70018834            		Infineon Technologies AG30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET ST PKG
            RoHS: Compliant            		0
            • 1000:$1.8500
            • 2000:$1.7000
            IRF6626TR1
            DISTI # 942-IRF6626TR1            		Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
            RoHS: Not compliant            		0
              IRF6626TR1PBF
              DISTI # 942-IRF6626TR1PBF              		Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
              RoHS: Compliant              		0
                IRF6626TR1
                DISTI # 1078417                		Infineon Technologies AG 
                RoHS: Compliant                		0
                • 1:$4.2600
                Bild Teil # Beschreibung
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                Mfr.#: IRF6644TR1PBF

                OMO.#: OMO-IRF6644TR1PBF-INFINEON-TECHNOLOGIES

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                Mfr.#: IRF6662TRPBF

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                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                5000
                Menge eingeben:
                Der aktuelle Preis von IRF6626TR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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