UT6K3TCR

UT6K3TCR
Mfr. #:
UT6K3TCR
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 30V Nch+Nch Si MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UT6K3TCR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UT6K3TCR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HUML2020L-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
5.5 A
Rds On - Drain-Source-Widerstand:
30 mOhms, 30 mOhms
Vgs th - Gate-Source-Schwellenspannung:
500 mV
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
4 nC, 4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
2 N-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
2.3 S, 2.3 S
Abfallzeit:
5.1 ns, 5.1 ns
Produktart:
MOSFET
Anstiegszeit:
5.8 ns, 5.8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns, 13 ns
Typische Einschaltverzögerungszeit:
7.2 ns, 7.2 ns
Teil # Aliase:
UT6K3
Tags
UT6K, UT6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 3000, Dual N-Channel MOSFET, 5.5 A, 30 V, 8-Pin DFN ROHM UT6K3TCR
***et Europe
30V Nch+Nch Middle Power MOSFET
***i-Key
30V NCH+NCH MIDDLE POWER MOSFET
***
30V NCH+NCH MIDDLE PWR MOSFET
***ark
Mosfet, Dual N-Ch, 30V, 5.5A, 2W; Transistor Polarity:dual N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 30V, 5.5A, 2W; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2W; Transistor Case Style:DFN2020; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, DOPPIO CAN-N, 30V, 5.5A, 2W; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:5.5A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.03ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1.5V; Dissipazione di Potenza Pd:2W; Modello Case Transistor:DFN2020; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Low-Gate Drive Voltage MOSFETs
ROHM Low-Gate Drive Voltage MOSFETs have a wide drive type of 0.9 volts to 10 volts. This wide drive type range offers support for applications ranging from a small signal to high power. These MOSFETs come in a wide choice of sizes that are as small as the microminiature package (0604 sizes). This variety of sizes help to contribute to area space saving in an application. These MOSFETs offer superior high-speed switching and low On-Resistance.
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Teil # Mfg. Beschreibung Aktie Preis
UT6K3TCR
DISTI # UT6K3TCRCT-ND
ROHM Semiconductor30V NCH+NCH MIDDLE POWER MOSFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12383In Stock
  • 1000:$0.2772
  • 500:$0.3465
  • 100:$0.4383
  • 10:$0.5720
  • 1:$0.6500
UT6K3TCR
DISTI # UT6K3TCRDKR-ND
ROHM Semiconductor30V NCH+NCH MIDDLE POWER MOSFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12383In Stock
  • 1000:$0.2772
  • 500:$0.3465
  • 100:$0.4383
  • 10:$0.5720
  • 1:$0.6500
UT6K3TCR
DISTI # UT6K3TCRTR-ND
ROHM Semiconductor30V NCH+NCH MIDDLE POWER MOSFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 15000:$0.2237
  • 6000:$0.2271
  • 3000:$0.2439
UT6K3TCR
DISTI # UT6K3TCR
ROHM Semiconductor30V Nch+Nch Middle Power MOSFET (Alt: UT6K3TCR)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.1669
  • 500:€0.1799
  • 100:€0.1949
  • 50:€0.2129
  • 25:€0.2339
  • 10:€0.2599
  • 1:€0.2929
UT6K3TCR
DISTI # UT6K3TCR
ROHM Semiconductor30V Nch+Nch Middle Power MOSFET - Tape and Reel (Alt: UT6K3TCR)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2149
  • 18000:$0.2209
  • 12000:$0.2339
  • 6000:$0.2489
  • 3000:$0.2659
UT6K3TCR
DISTI # 82AC3753
ROHM SemiconductorMOSFET, DUAL N-CH, 30V, 5.5A, 2W,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes1825
  • 1000:$0.2730
  • 500:$0.2950
  • 250:$0.3180
  • 100:$0.3400
  • 50:$0.4030
  • 25:$0.4650
  • 10:$0.5270
  • 1:$0.6260
UT6K3TCR
DISTI # 755-UT6K3TCR
ROHM SemiconductorMOSFET 30V Nch+Nch Si MOSFET
RoHS: Compliant
14074
  • 1:$0.6200
  • 10:$0.5220
  • 100:$0.3370
  • 1000:$0.2700
  • 3000:$0.2280
  • 9000:$0.2190
  • 24000:$0.2110
UT6K3TCRROHM Semiconductor 1788
  • 1482:$0.4725
  • 297:$0.5400
  • 1:$1.3500
UT6K3TCR
DISTI # 2965352
ROHM SemiconductorMOSFET, DUAL N-CH, 30V, 5.5A, 2W
RoHS: Compliant
1780
  • 500:$0.3670
  • 250:$0.3780
  • 100:$0.4240
  • 25:$0.6890
  • 5:$0.7420
UT6K3TCRROHM SemiconductorRoHS(ship within 1day)2235
  • 1:$1.0300
  • 10:$0.6000
  • 50:$0.3800
  • 100:$0.3300
  • 500:$0.2800
  • 1000:$0.2700
UT6K3TCR
DISTI # 2965352
ROHM SemiconductorMOSFET, DUAL N-CH, 30V, 5.5A, 2W1800
  • 500:£0.2080
  • 250:£0.2260
  • 100:£0.2440
  • 10:£0.4200
  • 1:£0.5150
UT6K3TCRROHM SemiconductorMOSFET 30V Nch+Nch Si MOSFET
RoHS: Compliant
Americas -
    UT6K3TCRROHM Semiconductor 100
    • 1:¥5.5674
    • 100:¥3.1567
    • 1500:¥2.0013
    • 3000:¥1.4910
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    Mfr.#: LP2985-33DBVR

    OMO.#: OMO-LP2985-33DBVR

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    RF01VM2STE-17

    Mfr.#: RF01VM2STE-17

    OMO.#: OMO-RF01VM2STE-17-ROHM-SEMI

    DIODE GEN PURP 250V 100MA UMD2
    SST26WF064CT-104I/MF

    Mfr.#: SST26WF064CT-104I/MF

    OMO.#: OMO-SST26WF064CT-104I-MF-MICROCHIP-TECHNOLOGY

    IC FLASH 64M SPI 104MHZ 8TDFN
    LP2985-33DBVR

    Mfr.#: LP2985-33DBVR

    OMO.#: OMO-LP2985-33DBVR-TEXAS-INSTRUMENTS

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    Verfügbarkeit
    Aktie:
    14
    Auf Bestellung:
    1997
    Menge eingeben:
    Der aktuelle Preis von UT6K3TCR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,62 $
    0,62 $
    10
    0,52 $
    5,22 $
    100
    0,34 $
    33,70 $
    1000
    0,27 $
    270,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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