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AOT5B65M1

AOT5B65M1
Mfr. #:
AOT5B65M1
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
IGBT 650V 5A TO220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOT5B65M1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOT5, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ha & Omega Semiconductor SCT
650V, 5A AlphaIGBT(TM) With Soft and Fast Recovery Anti-Parallel Diode, TO220-3, RoHS
***i-Key
IGBT 650V 5A TO220
***ical
Trans IGBT Chip N-CH 600V 10A 88000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
H Series 600 V 10 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT, SINGLE, 600V, 10A, TO-220AB; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:88W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 10A 24000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
H Series 600 V 10 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 10A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 24W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ical
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF7NC60HD Series 600 V 10 A N-Channel Very Fast PowerMESH IGBT - TO-220FP
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 9A 3-Pin(3+Tab) TO-220FP
***i-Key
IGBT 600V 9A 32W TO220-3
***i-Key Marketplace
IGBT, 9A, 600V, N-CHANNEL
***et Europe
IGBT PRODUCTS
***ical
Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ineon SCT
650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes
***ineon SCT
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Teil # Mfg. Beschreibung Aktie Preis
AOT5B65M1
DISTI # 785-1765-ND		Alpha & Omega SemiconductorIGBT 650V 5A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		890In Stock
  • 500:$0.8379
  • 250:$0.9482
  • 100:$1.0805
  • 25:$1.2348
  • 10:$1.3670
  • 1:$1.5400
Bild Teil # Beschreibung
AOT500

Mfr.#: AOT500

OMO.#: OMO-AOT500-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 33V 80A TO220
AOT502

Mfr.#: AOT502

OMO.#: OMO-AOT502-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 33V 9A TO220
AOT5630

Mfr.#: AOT5630

OMO.#: OMO-AOT5630-1190

 Neu und Original
AOT5B60D

Mfr.#: AOT5B60D

OMO.#: OMO-AOT5B60D-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 600V 10A 82.4W TO220
AOT5B65M1

Mfr.#: AOT5B65M1

OMO.#: OMO-AOT5B65M1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 5A TO220
AOT5N100

Mfr.#: AOT5N100

OMO.#: OMO-AOT5N100-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 1000V 4A TO220
AOT5N100 1000V 4A

Mfr.#: AOT5N100 1000V 4A

OMO.#: OMO-AOT5N100-1000V-4A-1190

 Neu und Original
AOT5N50 T5N50

Mfr.#: AOT5N50 T5N50

OMO.#: OMO-AOT5N50-T5N50-1190

 Neu und Original
AOT5N90

Mfr.#: AOT5N90

OMO.#: OMO-AOT5N90-1190

 Neu und Original
AOT5N50_001

Mfr.#: AOT5N50_001

OMO.#: OMO-AOT5N50-001-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 500V 5A TO-220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von AOT5B65M1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,26 $
1,26 $
10
1,19 $
11,94 $
100
1,13 $
113,12 $
500
1,07 $
534,15 $
1000
1,01 $
1 005,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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