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AOT5B60D

AOT5B60D
Mfr. #:
AOT5B60D
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
IGBT 600V 10A 82.4W TO220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOT5B60D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Alpha & Omega Semiconductor Inc.
Produktkategorie
IGBTs - Single
Serie
Alpha-IGBT
Verpackung
Rohr
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220
Leistung max
82.4W
Reverse-Recovery-Time-trr
98ns
Strom-Kollektor-Ic-Max
23A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
20A
Vce-on-Max-Vge-Ic
1.8V @ 15V, 5A
Schaltenergie
140μJ (on), 40μJ (off)
Gate-Gebühr
9.4nC
Td-ein-aus-25°C
12ns/83ns
Testbedingung
400V, 5A, 60 Ohm, 15V
Tags
AOT5, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 600V 10A 82.4W TO220
***ha & Omega Semiconductor SCT
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***r Electronics
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***nell
IGBT, SINGLE, 600V, 20A, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
***ow.cn
Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube
*** Electronics
ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins
***ark
IGBT, SINGLE, 600V, 24A, TO-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
***p One Stop Global
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***ure Electronics
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***r Electronics
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***el Electronic
STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
***nell
IGBT, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
***emi
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***ical
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***nell
IGBT, SINGLE, 600V, 40A, SC-67; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 40W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: SC-67; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 23A 73000mW 3-Pin(3+Tab) TO-220F Rail
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,12A I(C),to-220Ab(Fp) Rohs Compliant: Yes
***ure Electronics
SGS23N60UFD Series 600 V 23 A Flange Mount Ultra-Fast IGBT-TO-220F
***rchild Semiconductor
Fairchild's UFD series of insulated gate bipolar transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***ical
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
***ure Electronics
H Series 600 V 20 A Through Hole Silicon IGBT - TO-220-3
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 20A, TO-220AB; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Teil # Mfg. Beschreibung Aktie Preis
AOT5B60D
DISTI # 785-1595-5-ND		Alpha & Omega SemiconductorIGBT 600V 10A 82.4W TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.8030
AOT5B60D
DISTI # AOT5B60D		Alpha & Omega SemiconductorTransistor: IGBT,600V,5A,41.2W,TO220,Eon:0.14mJ,Eoff:0.04mJ974
  • 1:$1.2000
  • 5:$1.0300
  • 25:$0.8300
  • 100:$0.7500
  • 500:$0.7000
Bild Teil # Beschreibung
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Mfr.#: AOT5630

OMO.#: OMO-AOT5630-1190

 Neu und Original
AOT5B60D

Mfr.#: AOT5B60D

OMO.#: OMO-AOT5B60D-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 600V 10A 82.4W TO220
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Mfr.#: AOT5B65M1

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AOT5N100

Mfr.#: AOT5N100

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Mfr.#: AOT5N50

OMO.#: OMO-AOT5N50-ALPHA-AND-OMEGA-SEMICONDUCTOR

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AOT5N50 T5N50

Mfr.#: AOT5N50 T5N50

OMO.#: OMO-AOT5N50-T5N50-1190

 Neu und Original
AOT5N90

Mfr.#: AOT5N90

OMO.#: OMO-AOT5N90-1190

 Neu und Original
AOT5N50_001

Mfr.#: AOT5N50_001

OMO.#: OMO-AOT5N50-001-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 500V 5A TO-220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von AOT5B60D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,04 $
1,04 $
10
0,98 $
9,83 $
100
0,93 $
93,15 $
500
0,88 $
439,90 $
1000
0,83 $
828,00 $
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