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IXFH80N65X2

IXFH80N65X2
Mfr. #:
IXFH80N65X2
Hersteller:
Littelfuse
Beschreibung:
MOSFET N-CH 650V 80A TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH80N65X2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFH80N65X2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Rohr
Gewichtseinheit
0.056438 oz
Montageart
Durchgangsloch
Handelsname
HiPerFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Pd-Verlustleistung
890 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
42 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
2.7 V
Rds-On-Drain-Source-Widerstand
40 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
60 ns
Typische-Einschaltverzögerungszeit
40 ns
Qg-Gate-Ladung
143 nC
Vorwärts-Transkonduktanz-Min
36 S
Kanal-Modus
Erweiterung
Tags
IXFH80N6, IXFH80, IXFH8, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXYS IXFH80N65X2
***ark
Mosfet, N Channel, 650V, 80A, To-247 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247
***i-Key
MOSFET N-CH 650V 80A TO-247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 80A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:890W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 650V, 80A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.038ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:890W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HiPerFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFH80N65X2
DISTI # C1S331700121901		IXYS CorporationMOSFETs60
  • 50:$10.1000
  • 10:$11.0000
  • 5:$13.4000
  • 1:$15.0000
IXFH80N65X2
DISTI # IXFH80N65X2-ND		IXYS CorporationMOSFET N-CH 650V 80A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		3006In Stock
  • 510:$7.5702
  • 120:$9.0354
  • 30:$10.0123
  • 1:$12.2100
IXFH80N65X2-4
DISTI # IXFH80N65X2-4-ND		IXYS CorporationMOSFET N-CH
RoHS: Not compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$11.1847
IXFH80N65X2
DISTI # 31264563		IXYS CorporationTrans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-24760
  • 2:$5.9396
IXFH80N65X2
DISTI # 02AC9803		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes19
  • 1:$12.7600
  • 10:$11.4900
  • 25:$9.5600
  • 50:$8.8800
  • 100:$8.6800
  • 250:$7.9300
  • 500:$7.2300
IXFH80N65X2
DISTI # 747-IXFH80N65X2		IXYS CorporationMOSFET MOSFET 650V/80A Ultra Junction X2
RoHS: Compliant		382
  • 1:$12.7600
  • 10:$11.4900
  • 25:$9.5600
  • 50:$8.8800
  • 100:$8.6800
  • 250:$7.9300
  • 500:$7.2300
  • 1000:$6.8900
IXFH80N65X2
DISTI # 1464236		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU90
  • 30:£7.0470
  • 120:£6.7120
  • 300:£6.4060
  • 600:£5.7920
  • 900:£5.3290
IXFH80N65X2
DISTI # 9171439P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU13
  • 5:£8.6900
  • 10:£8.4600
  • 30:£8.2400
  • 90:£8.0400
IXFH80N65X2
DISTI # 2674750		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		19
  • 1:£10.5800
  • 5:£10.0500
  • 10:£7.5300
  • 50:£6.9900
  • 100:£6.8300
IXFH80N65X2
DISTI # 2674750		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		19
  • 1:$15.0400
  • 10:$14.0600
  • 100:$12.4400
  • 500:$11.7600
Bild Teil # Beschreibung
IXFH80N65X2

Mfr.#: IXFH80N65X2

OMO.#: OMO-IXFH80N65X2

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Mfr.#: IXFH80N100

OMO.#: OMO-IXFH80N100-1190

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IXFH80N25X3

Mfr.#: IXFH80N25X3

OMO.#: OMO-IXFH80N25X3-IXYS-CORPORATION

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IXFH80N65X

Mfr.#: IXFH80N65X

OMO.#: OMO-IXFH80N65X-1190

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IXFH80N65X2-4

Mfr.#: IXFH80N65X2-4

OMO.#: OMO-IXFH80N65X2-4-IXYS-CORPORATION

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IXFH88N30

Mfr.#: IXFH88N30

OMO.#: OMO-IXFH88N30-1190

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OMO.#: OMO-IXFH80N085-IXYS-CORPORATION

 MOSFET HiPerFETTM Power MOSFET
IXFH88N20Q

Mfr.#: IXFH88N20Q

OMO.#: OMO-IXFH88N20Q-IXYS-CORPORATION

 MOSFET 88 Amps 200V 0.03 Rds
IXFH80N15Q

Mfr.#: IXFH80N15Q

OMO.#: OMO-IXFH80N15Q-IXYS-CORPORATION

 MOSFET 80 Amps 150V 0.0225 Rds
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IXFH80N65X2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,34 $
10,34 $
10
9,82 $
98,18 $
100
9,30 $
930,15 $
500
8,78 $
4 392,40 $
1000
8,27 $
8 268,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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