PartNumber | IXFH80N65X2 | IXFH80N30P3 | IXFH80N10 |
Description | MOSFET MOSFET 650V/80A Ultra Junction X2 | MOSFET Polar3 HiPerFET Power MOSFET | MOSFET 80 Amps 100V 0.125 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | 100 V |
Id Continuous Drain Current | 80 A | - | 80 A |
Rds On Drain Source Resistance | 40 mOhms | - | 12.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
Vgs Gate Source Voltage | 30 V | - | 20 V |
Qg Gate Charge | 143 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 890 W | - | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | 650V Ultra Junction X2 | IXFH80N30 | IXFH80N10 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 36 S | - | - |
Fall Time | 11 ns | - | 26 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 42 ns | - | 63 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | - | 90 ns |
Typical Turn On Delay Time | 40 ns | - | 41 ns |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.229281 oz |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Height | - | - | 21.46 mm |
Length | - | - | 16.26 mm |
Width | - | - | 5.3 mm |