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IXFH80N20Q

IXFH80N20Q
Mfr. #:
IXFH80N20Q
Hersteller:
IXYS
Beschreibung:
MOSFET 200V 80A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH80N20Q Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH80N20Q Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
FETs - Einzeln
Tags
IXFH80, IXFH8, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 200V 80A 3-Pin(3+Tab) TO-247AD
***el Nordic
Contact for details
***icroelectronics
N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™2; Power MOSFET
***ical
Trans MOSFET N-CH 200V 83A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 83A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-247AD
*** Electronic Components
MOSFET N-channel 200V, 83A STripFET Mosfet
***el Electronic
CAP CER 0.068UF 630V X7R RADIAL
***trelec
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
***ure Electronics
Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC
***ure Electronics
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
***fin
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
***itex
Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC
***eco
Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W
***ure Electronics
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ure Electronics
Single N-Channel 200 V 0.055 Ohms Flange Mount Power Mosfet - TO-247AC
***ser
Single-Gate MOSFET Transistors N-Chan 200V 46 Amp
***ical
Trans MOSFET N-CH 200V 46A 3-Pin (3+Tab) TO-247AC
***(Formerly Allied Electronics)
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 250 V 0.075 Ohms Flange Mount Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 250V 38A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 250V 38A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N, 250V, 38A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:38A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:150A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds Max:250V
Teil # Mfg. Beschreibung Aktie Preis
IXFH80N20Q
DISTI # IXFH80N20Q-ND		IXYS CorporationMOSFET N-CH 200V 80A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Limited Supply - Call
    IXFH80N20QIXYS Corporation*** FREE SHIPPING ORDERS OVER $100 ***34
    • 22:$22.0817
    • 11:$23.3084
    • 1:$24.5352
    Bild Teil # Beschreibung
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IXFH80N20Q dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    33,12 $
    33,12 $
    10
    31,47 $
    314,66 $
    100
    29,81 $
    2 981,03 $
    500
    28,15 $
    14 077,10 $
    1000
    26,50 $
    26 498,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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