CSD83325LT

Mfr. #:: CSD83325LT
Beschreibung:: MOSFET 12V, N ch NexFET MOSFETG , dual LGA, 5.9mOhm 6-PICOSTAR -55 to 150
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD83325LT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD83325LT Mehr Informationen CSD83325LT Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: BGA-6

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 12 V

Id - Kontinuierlicher Drainstrom:: 8 A

Rds On - Drain-Source-Widerstand:: 5.9 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 950 mV

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 8.4 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2.3 W

Aufbau:: Dual

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 0.2 mm

Länge:: 2.2 mm

Produkt:: Leistungs-MOSFET

Serie:: CSD83325L

Transistortyp:: 2 N-Channel

Breite:: 1.15 mm

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 36 S

Abfallzeit:: 589 ns

Produktart:: MOSFET

Anstiegszeit:: 353 ns

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 711 ns

Typische Einschaltverzögerungszeit:: 205 ns

Gewichtseinheit:: 0.000053 oz

Tags: CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD83325LT Beschreibung

***Components: In a Pack of 10, N-Channel MOSFET, 8 A, 12 V, 6-Pin PICOSTAR Texas Instruments CSD83325LT

***as Instruments: 12V, N ch NexFET MOSFET™, dual LGA, 5.9mOhm 6-PICOSTAR -55 to 150

***p One Stop Global: Trans MOSFET N-CH 12V 8A 6-Pin LGA T/R

***et Europe: Trans MOSFET N-CH 12V 6-Pin LGA T/R

***i-Key: MOSFET 2N-CH 12V 6PICOSTAR

***ical: High Frequency Synchronous Power Module

***ark: Mosfet, Dual N-Ch, 12V, 8A, Picostar-6; Transistor Polarity:dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0099Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950Mv; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0099ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV; Power Dissipation Pd:2.3W; Transistor Case Style:PICOSTAR; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:12V; Resistenza di Attivazione Rds(on):0.0099ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:950mV; Dissipazione di Potenza Pd:2.3W; Modello Case Transistor:PICOSTAR; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

***TEXAS: This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

CSD83325LT Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD83325LT DISTI # 296-38590-1-ND	MOSFET 2N-CH 12V 6PICOSTAR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1603In Stock	100:$0.4925 10:$0.6420 1:$0.7300
CSD83325LT DISTI # 296-38590-6-ND	MOSFET 2N-CH 12V 6PICOSTAR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1603In Stock	100:$0.4925 10:$0.6420 1:$0.7300
CSD83325LT DISTI # 296-38590-2-ND	MOSFET 2N-CH 12V 6PICOSTAR RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	1500In Stock	1250:$0.3024 500:$0.3780 250:$0.4442
CSD83325LT DISTI # CSD83325LT	Trans MOSFET N-CH 12V 6-Pin LGA T/R (Alt: CSD83325LT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 1000	5:€0.5580 25:€0.4590 100:€0.3590 250:€0.3270 500:€0.2950 1000:€0.2630 5000:€0.2360
CSD83325LT DISTI # CSD83325LT	Trans MOSFET N-CH 12V 6-Pin LGA T/R - Tape and Reel (Alt: CSD83325LT) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$0.2739 2000:$0.2609 3500:$0.2519 7500:$0.2429 15000:$0.2369
CSD83325LT DISTI # 595-CSD83325LT	MOSFET CSD83325L, Dual N-Channel NexFET Power MOSFETs 6-PICOSTAR RoHS: Compliant	765	1:$0.7100 10:$0.5900 100:$0.3780
CSD83325L DISTI # 595-CSD83325L	MOSFET CSD83325L, Dual N-Channel NexFET Power MOSFETs 6-PICOSTAR RoHS: Compliant	208	1:$0.6200 10:$0.5100 100:$0.3300 1000:$0.2640 2000:$0.2400 3000:$0.2230
CSD83325LT DISTI # 9009942P	NEXFET DUAL N-CHANNEL MOSFET 12V 8A LGA6, RL	490	100:£0.2760 500:£0.2480 1000:£0.2210
CSD83325LT DISTI # 2466805RL	MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6 RoHS: Compliant	0	1:$1.1300 10:$0.9340 100:$0.5990 250:$0.5990
CSD83325LT DISTI # 2466805	MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6 RoHS: Compliant	150	1:$1.1300 10:$0.9340 100:$0.5990 250:$0.5990
CSD83325LT DISTI # 2466805	MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6 RoHS: Compliant	163	5:£0.5040 25:£0.4640 100:£0.2860 250:£0.2800 500:£0.2750

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Verfügbarkeit

Aktie:: 615
Auf Bestellung:: 2598
Menge eingeben:

Der aktuelle Preis von CSD83325LT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,71 $~~; ~~0,71 $~~

10: ~~0,59 $~~; ~~5,90 $~~

100: ~~0,38 $~~; ~~37,80 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD83325LT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes