CSD85301Q2 vs CSD83325LT vs CSD83325L

 
PartNumberCSD85301Q2CSD83325LTCSD83325L
DescriptionMOSFET CSD85301Q2 Dual N- Channel Power MOSFETMOSFET 12V, N ch NexFET MOSFETG , dual LGA, 5.9mOhm 6-PICOSTAR -55 to 150MOSFET 2N-CH 12V 6PICOSTAR
ManufacturerTexas InstrumentsTexas InstrumentsTexas Instruments
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseWSON-FET-6BGA-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V12 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance27 mOhms5.9 mOhms-
Vgs th Gate Source Threshold Voltage600 mV950 mV-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge5.4 nC, 5.4 nC8.4 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.3 W2.3 W-
ConfigurationDualDual-
Channel ModeEnhancement--
TradenameNexFETNexFET-
PackagingReelReelDigi-ReelR Alternate Packaging
Height0.75 mm0.2 mm-
Length2 mm2.2 mm-
SeriesCSD85301Q2CSD83325LNexFET
Transistor Type2 N-Channel2 N-Channel-
Width2 mm1.15 mm-
BrandTexas InstrumentsTexas Instruments-
Forward Transconductance Min20 S, 20 S36 S-
Fall Time15 ns, 15 ns589 ns-
Product TypeMOSFETMOSFET-
Rise Time26 ns, 26 ns353 ns-
Factory Pack Quantity3000250-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14 ns, 14 ns711 ns-
Typical Turn On Delay Time6 ns, 6 ns205 ns-
Unit Weight0.000342 oz0.000053 oz-
Product-Power MOSFET-
Package Case--6-XFBGA
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--6-PicoStar
FET Type--2 N-Channel (Dual) Common Drain
Power Max--2.3W
Drain to Source Voltage Vdss---
Input Capacitance Ciss Vds---
FET Feature--Standard
Current Continuous Drain Id 25°C---
Rds On Max Id Vgs---
Vgs th Max Id---
Gate Charge Qg Vgs--10.9nC @ 4.5V
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