PartNumber | CSD85301Q2 | CSD83325LT | CSD83325L |
Description | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET | MOSFET 12V, N ch NexFET MOSFETG , dual LGA, 5.9mOhm 6-PICOSTAR -55 to 150 | MOSFET 2N-CH 12V 6PICOSTAR |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | WSON-FET-6 | BGA-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 12 V | - |
Id Continuous Drain Current | 8 A | 8 A | - |
Rds On Drain Source Resistance | 27 mOhms | 5.9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | 950 mV | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 5.4 nC, 5.4 nC | 8.4 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.3 W | 2.3 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Height | 0.75 mm | 0.2 mm | - |
Length | 2 mm | 2.2 mm | - |
Series | CSD85301Q2 | CSD83325L | NexFET |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 2 mm | 1.15 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Forward Transconductance Min | 20 S, 20 S | 36 S | - |
Fall Time | 15 ns, 15 ns | 589 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 26 ns, 26 ns | 353 ns | - |
Factory Pack Quantity | 3000 | 250 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 14 ns, 14 ns | 711 ns | - |
Typical Turn On Delay Time | 6 ns, 6 ns | 205 ns | - |
Unit Weight | 0.000342 oz | 0.000053 oz | - |
Product | - | Power MOSFET | - |
Package Case | - | - | 6-XFBGA |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 6-PicoStar |
FET Type | - | - | 2 N-Channel (Dual) Common Drain |
Power Max | - | - | 2.3W |
Drain to Source Voltage Vdss | - | - | - |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | - |
Rds On Max Id Vgs | - | - | - |
Vgs th Max Id | - | - | - |
Gate Charge Qg Vgs | - | - | 10.9nC @ 4.5V |