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FFSH20120A-F085

FFSH20120A-F085
Mfr. #:
FFSH20120A-F085
Hersteller:
ON Semiconductor
Beschreibung:
Schottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FFSH20120A-F085 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FFSH20120A-F085 DatasheetFFSH20120A-F085 Datasheet (P4-P6)FFSH20120A-F085 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
FFSH20120A-F085 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-2LD
Wenn - Vorwärtsstrom:
20 A
Vrrm - Repetitive Sperrspannung:
1200 V
Vf - Durchlassspannung:
1.45 V
Ifsm - Vorwärtsstoßstrom:
135 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
200 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Marke:
ON Semiconductor
Pd - Verlustleistung:
273 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
450
Unterkategorie:
Dioden & Gleichrichter
trr - Reverse Recovery-Zeit:
-
Vr - Sperrspannung:
1200 V
Tags
FFSH201, FFSH2, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Teil # Mfg. Beschreibung Aktie Preis
FFSH20120A-F085
DISTI # V99:2348_21657264		ON SemiconductorSilicon Carbide Schottky Diode440
  • 500:$13.3800
  • 250:$14.3000
  • 100:$14.5900
  • 25:$16.7100
  • 10:$17.6000
  • 1:$19.3200
FFSH20120A-F085
DISTI # V36:1790_21657264		ON SemiconductorSilicon Carbide Schottky Diode0
  • 450000:$10.7600
  • 225000:$10.7700
  • 45000:$12.5500
  • 4500:$16.7200
  • 450:$17.4900
FFSH20120A-F085
DISTI # FFSH20120A-F085OS-ND		ON Semiconductor1200V 20A AUTO SIC SBD
RoHS: Not compliant
Min Qty: 1
Container: Tube		449In Stock
  • 450:$15.0381
  • 25:$17.9488
  • 10:$18.7250
  • 1:$20.3700
FFSH20120A-F085
DISTI # 31234725		ON SemiconductorSilicon Carbide Schottky Diode1350
  • 500:$13.2660
  • 450:$14.1867
FFSH20120A-F085
DISTI # 29729158		ON SemiconductorSilicon Carbide Schottky Diode440
  • 500:$13.3800
  • 250:$14.3000
  • 100:$14.5900
  • 25:$16.7100
  • 10:$17.6000
  • 1:$19.3200
FFSH20120A-F085
DISTI # FFSH20120A-F085		ON Semiconductor1200V 20AAUTO SIC SBD - Rail/Tube (Alt: FFSH20120A-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$11.3900
  • 2700:$11.5900
  • 1800:$11.7900
  • 450:$11.9900
  • 900:$11.9900
FFSH20120A-F085
DISTI # 62AC6882		ON SemiconductorSIC SCHOTTKY DIODE, AEC-Q101, TO-247,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:20A,Total Capacitive Charge Qc:120nC,Diode Case Style:TO-247,No. of Pins:2RoHS Compliant: Yes448
  • 500:$13.5300
  • 250:$14.4700
  • 100:$15.2200
  • 50:$16.2500
  • 25:$17.2700
  • 10:$18.0200
  • 1:$19.5900
FFSH20120A-F085
DISTI # 863-FFSH20120A-F085		ON SemiconductorSchottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
RoHS: Compliant		663
  • 1:$19.4000
  • 10:$17.8400
  • 25:$17.1000
  • 100:$15.0700
  • 250:$14.3300
  • 500:$13.4000
FFSH20120A-F085
DISTI # 1784267		ON Semiconductor1200V 20AAUTO SIC SBD, TU420
  • 150:£9.9910
  • 30:£10.7840
FFSH20120A-F085
DISTI # 2895630		ON SemiconductorSIC SCHOTTKY DIODE, AEC-Q101, TO-247
RoHS: Compliant		448
  • 450:$22.6700
  • 25:$27.0500
  • 10:$28.2200
  • 1:$30.7000
FFSH20120A-F085
DISTI # 2895630		ON SemiconductorSIC SCHOTTKY DIODE, AEC-Q101, TO-247448
  • 100:£10.9200
  • 50:£11.6600
  • 10:£12.3900
  • 5:£14.0600
  • 1:£14.0900
Bild Teil # Beschreibung
TL082CDR

Mfr.#: TL082CDR

OMO.#: OMO-TL082CDR

 Operational Amplifiers - Op Amps Dual JFET Op Amp
SQ2364EES-T1_GE3

Mfr.#: SQ2364EES-T1_GE3

OMO.#: OMO-SQ2364EES-T1-GE3

 MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
PMEG40T20ERX

Mfr.#: PMEG40T20ERX

OMO.#: OMO-PMEG40T20ERX

 Schottky Diodes & Rectifiers PMEG40T20ER/SOD123/S
TL082CDR

Mfr.#: TL082CDR

OMO.#: OMO-TL082CDR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps Dual JFET Op Amp
S1911-46R

Mfr.#: S1911-46R

OMO.#: OMO-S1911-46R-HARWIN

 JUMPER TIN SMD
C1812C105K1RACAUTO

Mfr.#: C1812C105K1RACAUTO

OMO.#: OMO-C1812C105K1RACAUTO-KEMET

 CAP, 1F, 100V, 10%, X7R, 1812
FFSB10120A-F085

Mfr.#: FFSB10120A-F085

OMO.#: OMO-FFSB10120A-F085-ON-SEMICONDUCTOR

 1200V 10A AUTO SIC SBD
FFSB20120A-F085

Mfr.#: FFSB20120A-F085

OMO.#: OMO-FFSB20120A-F085-ON-SEMICONDUCTOR

 Silicon Carbide Schottky Diode
PMEG40T20ERX

Mfr.#: PMEG40T20ERX

OMO.#: OMO-PMEG40T20ERX-NEXPERIA

 DIODE SCHOTTKY 40V 2A SOD123W
Verfügbarkeit
Aktie:
663
Auf Bestellung:
2646
Menge eingeben:
Der aktuelle Preis von FFSH20120A-F085 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
19,40 $
19,40 $
10
17,84 $
178,40 $
25
17,10 $
427,50 $
100
15,07 $
1 507,00 $
250
14,33 $
3 582,50 $
500
13,40 $
6 700,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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