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SIDR402DP-T1-GE3

SIDR402DP-T1-GE3
Mfr. #:
SIDR402DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR402DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR402DP-T1-GE3 DatasheetSIDR402DP-T1-GE3 Datasheet (P4-P6)SIDR402DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR402DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
1.16 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.3 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
53 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
147 S
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
100 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
56 ns
Typische Einschaltverzögerungszeit:
45 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 64.6 A 6.25 W Surface Mount Mosfet - POWERPAK-SO-8DC
***roFlash
TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R
***ark
Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR402DP-T1-GE3
DISTI # V36:1790_21749947		Vishay IntertechnologiesN-Channel 40 V (D-S) MOSFET0
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.1529
    • 3000:$1.1673
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.0529
    • 500:€1.0809
    • 100:€1.0959
    • 50:€1.1129
    • 25:€1.2539
    • 10:€1.5199
    • 1:€2.1699
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.0549
    • 30000:$1.0839
    • 18000:$1.1149
    • 12000:$1.1629
    • 6000:$1.1979
    SIDR402DP-T1-GE3
    DISTI # 59AC7336    		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
    • 10000:$1.0300
    • 6000:$1.0700
    • 4000:$1.1200
    • 2000:$1.2400
    • 1000:$1.3100
    • 1:$1.3900
    SIDR402DP-T1-GE3
    DISTI # 78AC6501    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes0
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.8200
    • 25:$1.9800
    • 10:$2.1400
    • 1:$2.5800
    SIDR402DP-T1-GE3
    DISTI # 78-SIDR402DP-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 3000:$1.1100
    • 6000:$1.0700
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W0
    • 500:£1.0600
    • 250:£1.1400
    • 100:£1.2100
    • 10:£1.5700
    • 1:£2.1200
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$1.8900
    • 500:$2.0000
    • 250:$2.1300
    • 100:$2.3100
    • 10:$2.6600
    • 1:$3.0500
    Bild Teil # Beschreibung
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    SIDR402DP

    Mfr.#: SIDR402DP

    OMO.#: OMO-SIDR402DP-1190

    		 Neu und Original
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 40V PPSO-8DC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SIDR402DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,55 $
    2,55 $
    10
    2,12 $
    21,20 $
    100
    1,64 $
    164,00 $
    500
    1,44 $
    720,00 $
    1000
    1,19 $
    1 190,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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