SIDR220DP-T1-GE3 vs SIDR140DP-T1-GE3 vs SIDR390DP-T1-GE3

 
PartNumberSIDR220DP-T1-GE3SIDR140DP-T1-GE3SIDR390DP-T1-GE3
DescriptionMOSFET 25V Vds 16V Vgs PowerPAK SO-8DCMOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DCMOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8DC-8PowerPAK-SO-8DC-8PowerPAK-SO-8DC-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V30 V
Id Continuous Drain Current100 A100 A100 A
Rds On Drain Source Resistance820 uOhms670 uOhms1.15 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V800 mV
Vgs Gate Source Voltage4.5 V20 V, - 16 V4.5 V
Qg Gate Charge134 nC170 nC102 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation125 W125 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSIDSIDSID
Transistor Type1 N-Channel-1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time16 ns9 ns27 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time95 ns9 ns63 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time47 ns46 ns78 ns
Typical Turn On Delay Time51 ns19 ns51 ns
Forward Transconductance Min-90 S-
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