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SIDR140DP-T1-GE3

SIDR140DP-T1-GE3
Mfr. #:
SIDR140DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR140DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR140DP-T1-GE3 DatasheetSIDR140DP-T1-GE3 Datasheet (P4-P6)SIDR140DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR140DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
670 uOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
170 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
90 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
19 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR140DP-T1-GE3
DISTI # V99:2348_22587800		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.0786
  • 500:$1.3860
  • 100:$1.5526
  • 10:$2.0366
  • 1:$2.6928
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$1.1151
  • 3000:$1.1290
SIDR140DP-T1-GE3
DISTI # 31059629		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.1019
  • 500:$1.3471
  • 100:$1.5523
  • 10:$2.0165
  • 6:$2.6929
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3		Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SIDR140DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$1.0209
  • 30000:$1.0489
  • 18000:$1.0789
  • 12000:$1.1249
  • 6000:$1.1589
SIDR140DP-T1-GE3
DISTI # 81AC3428		Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 10000:$0.9960
  • 6000:$1.0400
  • 4000:$1.0800
  • 2000:$1.2000
  • 1000:$1.2600
  • 1:$1.3400
SIDR140DP-T1-GE3
DISTI # 99AC9550		Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes50
  • 500:$1.4000
  • 250:$1.5000
  • 100:$1.6100
  • 50:$1.7600
  • 25:$1.9200
  • 10:$2.0700
  • 1:$2.4900
SIDR140DP-T1-GE3
DISTI # 78-SIDR140DP-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
RoHS: Compliant		5477
  • 1:$2.4700
  • 10:$2.0500
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 3000:$1.0700
  • 6000:$1.0300
SIDR140DP-T1-GE3
DISTI # 3019067		Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO
RoHS: Compliant		50
  • 1000:$1.4900
  • 500:$1.6100
  • 250:$1.7800
  • 100:$1.9100
  • 10:$2.4000
  • 1:$3.1100
SIDR140DP-T1-GE3
DISTI # 3019067		Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO50
  • 500:£0.9960
  • 250:£1.1000
  • 100:£1.1800
  • 10:£1.4900
  • 1:£1.9300
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SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SIDR140DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,47 $
2,47 $
10
2,05 $
20,50 $
100
1,59 $
159,00 $
500
1,39 $
695,00 $
1000
1,15 $
1 150,00 $
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