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ZXMHC3A01T8TA

ZXMHC3A01T8TA
Mfr. #:
ZXMHC3A01T8TA
Hersteller:
Diodes Incorporated
Beschreibung:
Trans MOSFET N/P-CH 30V 3.1A/2.3A Automotive 8-Pin SM T/R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMHC3A01T8TA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
ZXMHC3A01T8TA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Arrays
Serie
ZXMHC3A
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
SOT-223-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
4 Channel
Lieferanten-Geräte-Paket
SM8
Aufbau
Halbbrücke
FET-Typ
2 N and 2 P-Channel (H-Bridge)
Leistung max
1.3W
Transistor-Typ
2 N-Channel 2 P-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
190pF @ 25V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
2.7A, 2A
Rds-On-Max-Id-Vgs
120 mOhm @ 2.5A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Lade-Qg-Vgs
3.9nC @ 10V
Pd-Verlustleistung
1.3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2.3 ns
Anstiegszeit
2.3 ns
Vgs-Gate-Source-Spannung
+/- 20 V +/- 20 V
ID-Dauer-Drain-Strom
3.1 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
180 mOhms 330 mOhms
Transistor-Polarität
N-Kanal P-Kanal
Kanal-Modus
Erweiterung
Tags
ZXMHC3A01T8T, ZXMHC3A01T, ZXMHC3A, ZXMHC3, ZXMHC, ZXMH, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA
***p One Stop Global
Trans MOSFET N/P-CH 30V 3.1A/2.3A 8-Pin SM8 T/R
***ical
Trans MOSFET N/P-CH 30V 2.7A/2A 8-Pin SM T/R
***ied Electronics & Automation
30V Enhancement MOSFET H-Bridge SM8
***ark
Mosfet, Comp, H/Bride, 30V, Soic8
***ure Electronics
MOSFET BVDSS: 25V~30V SM-8 T&R 1K
***i-Key
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
***ser
MOSFETs 30/30V 3.1/2.3A N & P Channel
***ronik
H-Br 30V 2A 335mOhm SM-8
***ment14 APAC
Prices include import duty and tax. MOSFET, COMP, H/BRIDE, 30V, SOIC8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.3W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:3.1A; Continuous Drain Current Id, P Channel:-2.3A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Half Bridge; On Resistance Rds(on), N Channel:0.12ohm; On Resistance Rds(on), P Channel:0.21ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***nell
MOSFET, COMP, H/BRIDE, 30V, SOIC8; Biegunowość tranzystora:Kanał N i P; Prąd ciągły Id drenu:3.1A; Napięcie drenu / źródła Vds:30V; Rezystancja przewodzenia Rds(on):0.12ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:-1V; Straty mocy Pd:1.3W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Konfiguracja modułu:Półmostek; Napięcie drenu / źródła Vds, kanał N:30V; Napięcie drenu / źródła Vds, kanał P:-30V; Opakowanie:Taśma cięta; Prąd ciągły Id drenu, kanał N:3.1A; Prąd ciągły Id drenu, kanał P:-2.3A; Rezystancja przewodzenia Rds(on), kanał N:0.12ohm; Rezystancja przewodzenia Rds(on), kanał P:0.21ohm; Temperatura robocza, min.:-55°C; Zakres temperatury roboczej:-55°C do +150°C
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
ZXMHC3A01T8TA
DISTI # V72:2272_06708048		Zetex / Diodes IncTrans MOSFET N/P-CH 30V 3.1A/2.3A Automotive 8-Pin SM T/R
RoHS: Compliant		2000
  • 1000:$0.7937
  • 500:$0.9080
  • 250:$1.0451
  • 100:$1.0563
  • 25:$1.3482
  • 10:$1.3488
  • 1:$1.5787
ZXMHC3A01T8TA
DISTI # V36:1790_06708048		Zetex / Diodes IncTrans MOSFET N/P-CH 30V 3.1A/2.3A Automotive 8-Pin SM T/R
RoHS: Compliant		0
    ZXMHC3A01T8TA
    DISTI # ZXMHC3A01T8CT-ND    		Diodes IncorporatedMOSFET 2N/2P-CH 30V 2.7A/2A SM8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		9681In Stock
    • 500:$1.0905
    • 100:$1.4021
    • 10:$1.7450
    • 1:$1.9300
    ZXMHC3A01T8TA
    DISTI # ZXMHC3A01T8DKR-ND    		Diodes IncorporatedMOSFET 2N/2P-CH 30V 2.7A/2A SM8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		9681In Stock
    • 500:$1.0905
    • 100:$1.4021
    • 10:$1.7450
    • 1:$1.9300
    ZXMHC3A01T8TA
    DISTI # ZXMHC3A01T8TR-ND    		Diodes IncorporatedMOSFET 2N/2P-CH 30V 2.7A/2A SM8
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		9000In Stock
    • 10000:$0.8800
    • 5000:$0.8965
    • 2000:$0.9267
    • 1000:$0.9872
    ZXMHC3A01T8TA
    DISTI # 32708556    		Zetex / Diodes IncTrans MOSFET N/P-CH 30V 3.1A/2.3A Automotive 8-Pin SM T/R
    RoHS: Compliant    		2000
    • 1000:$0.8532
    • 500:$0.9761
    • 250:$1.1235
    • 100:$1.1355
    • 25:$1.4493
    • 10:$1.4500
    ZXMHC3A01T8TA
    DISTI # ZXMHC3A01T8TA    		Diodes IncorporatedTrans MOSFET N/P-CH 30V 3.1A/2.3A 8-Pin SM8 T/R - Tape and Reel (Alt: ZXMHC3A01T8TA)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$0.8289
    • 2000:$0.7889
    • 4000:$0.7519
    • 6000:$0.7179
    • 10000:$0.7019
    ZXMHC3A01T8TA
    DISTI # ZXMHC3A01T8TA    		Diodes IncorporatedTrans MOSFET N/P-CH 30V 3.1A/2.3A 8-Pin SM8 T/R (Alt: ZXMHC3A01T8TA)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.7769
    • 2000:€0.7399
    • 4000:€0.7279
    • 6000:€0.7169
    • 10000:€0.6849
    ZXMHC3A01T8TA
    DISTI # 70550624    		Diodes Incorporated30V Enhancement MOSFET H-Bridge SM8
    RoHS: Compliant    		0
    • 25:$1.4000
    • 50:$1.3700
    • 125:$1.3300
    • 250:$1.2700
    • 625:$1.1900
    ZXMHC3A01T8TA
    DISTI # 522-ZXMHC3A01T8TA    		Diodes IncorporatedMOSFET 30/30V 3.1/2.3A N & P Channel
    RoHS: Compliant    		1987
    • 1:$1.6100
    • 10:$1.3700
    • 100:$1.1000
    • 500:$0.9630
    • 1000:$0.7980
    ZXMHC3A01T8TAZetex / Diodes Inc2.7 A, 30 V, 0.12 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET822
      ZXMHC3A01T8TA
      DISTI # 8231877P      		Zetex / Diodes Inc30V ENHANCEMENT MOSFET H-BRIDGE SM8, RL1530
      • 500:£0.7700
      • 250:£0.9060
      • 50:£1.0460
      • 15:£1.1820
      ZXMHC3A01T8TA
      DISTI # XSFP00000079000      		Diodes Incorporated 
      RoHS: Compliant      		7000 in Stock0 on Order
      • 7000:$1.2300
      • 1000:$1.3200
      ZXMHC3A01T8TA
      DISTI # 2061506      		Diodes IncorporatedMOSFET, COMP, H/BRIDE, 30V, SOIC8
      RoHS: Compliant      		0
      • 1000:$1.2000
      • 500:$1.4500
      • 100:$1.6600
      • 10:$2.0600
      • 1:$2.4300
      Bild Teil # Beschreibung
      ZXMHC3F381N8TC

      Mfr.#: ZXMHC3F381N8TC

      OMO.#: OMO-ZXMHC3F381N8TC

      		 MOSFET MOSFET H-BRIDGE SOP-8L
      ZXMHC3A01T8TA

      Mfr.#: ZXMHC3A01T8TA

      OMO.#: OMO-ZXMHC3A01T8TA

      		 MOSFET 30/30V 3.1/2.3A N & P Channel
      ZXMHC3A01N8TC

      Mfr.#: ZXMHC3A01N8TC

      OMO.#: OMO-ZXMHC3A01N8TC

      		 MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A
      ZXMHC3101

      Mfr.#: ZXMHC3101

      OMO.#: OMO-ZXMHC3101-1190

      		 Neu und Original
      ZXMHC3A01

      Mfr.#: ZXMHC3A01

      OMO.#: OMO-ZXMHC3A01-1190

      		 Neu und Original
      ZXMHC3A01T8

      Mfr.#: ZXMHC3A01T8

      OMO.#: OMO-ZXMHC3A01T8-1190

      		 Neu und Original
      ZXMHC3F381N8

      Mfr.#: ZXMHC3F381N8

      OMO.#: OMO-ZXMHC3F381N8-1190

      		 Neu und Original
      ZXMHC3A01T8TA-CUT TAPE

      Mfr.#: ZXMHC3A01T8TA-CUT TAPE

      OMO.#: OMO-ZXMHC3A01T8TA-CUT-TAPE-1190

      		 Neu und Original
      ZXMHC3F381N8TC

      Mfr.#: ZXMHC3F381N8TC

      OMO.#: OMO-ZXMHC3F381N8TC-DIODES

      		 Trans MOSFET N/P-CH 30V 4.98A/4.13A Automotive 8-Pin SO T/R
      ZXMHC3A01T8TA

      Mfr.#: ZXMHC3A01T8TA

      OMO.#: OMO-ZXMHC3A01T8TA-DIODES

      		 Trans MOSFET N/P-CH 30V 3.1A/2.3A Automotive 8-Pin SM T/R
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von ZXMHC3A01T8TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,00 $
      1,00 $
      10
      0,95 $
      9,50 $
      100
      0,90 $
      89,99 $
      500
      0,85 $
      424,95 $
      1000
      0,80 $
      799,90 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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