ZXMN4A06GTA

ZXMN4A06GTA
Mfr. #:
ZXMN4A06GTA
Hersteller:
Diodes Incorporated
Beschreibung:
IGBT Transistors MOSFET 40V N-Chnl UMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMN4A06GTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
ZXMN4A06GTA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Einzeln
Serie
ZXMN4A
Verpackung
Cut Tape (CT) Alternative Verpackung
Gewichtseinheit
0.000282 oz
Montageart
SMD/SMT
Paket-Koffer
TO-261-4, TO-261AA
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
SOT-223
Aufbau
Single Dual Drain
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
2W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
40V
Eingangskapazität-Ciss-Vds
770pF @ 40V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
5A (Ta)
Rds-On-Max-Id-Vgs
50 mOhm @ 4.5A, 10V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
18.2nC @ 10V
Pd-Verlustleistung
3.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7.35 ns
Anstiegszeit
4.45 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
7 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
75 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
28.61 ns
Typische-Einschaltverzögerungszeit
2.55 ns
Kanal-Modus
Erweiterung
Tags
ZXMN4A06G, ZXMN4, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
***ical
Trans MOSFET N-CH 40V 5A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ark
N Channel Mosfet, 40V, 7A, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. Of Pins:4Pinsrohs Compliant: Yes
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
ZXMN4A06GTA
DISTI # V72:2272_06708097
Zetex / Diodes IncTrans MOSFET N-CH 40V 7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
250
  • 500:$0.4337
  • 250:$0.4339
  • 100:$0.4340
  • 25:$0.6601
  • 10:$0.6606
  • 1:$0.7934
ZXMN4A06GTA
DISTI # ZXMN4A06GCT-ND
Diodes IncorporatedMOSFET N-CH 40V 5A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
83462In Stock
  • 500:$0.4879
  • 100:$0.6586
  • 10:$0.8540
  • 1:$0.9800
ZXMN4A06GTA
DISTI # ZXMN4A06GTR-ND
Diodes IncorporatedMOSFET N-CH 40V 5A SOT223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
82000In Stock
  • 1000:$0.4220
ZXMN4A06GTA
DISTI # 31010828
Zetex / Diodes IncTrans MOSFET N-CH 40V 7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
250
  • 500:$0.4337
  • 250:$0.4339
  • 100:$0.4340
  • 25:$0.6601
  • 20:$0.6606
ZXMN4A06GTA
DISTI # ZXMN4A06GTA
Diodes IncorporatedTrans MOSFET N-CH 40V 7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN4A06GTA)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.3259
  • 2000:$0.3099
  • 4000:$0.2949
  • 6000:$0.2819
  • 10000:$0.2759
ZXMN4A06GTA
DISTI # ZXMN4A06GTA
Diodes IncorporatedTrans MOSFET N-CH 40V 7A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMN4A06GTA)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€0.3909
  • 2000:€0.3899
  • 4000:€0.3879
  • 6000:€0.3869
  • 10000:€0.3859
ZXMN4A06GTA
DISTI # 38K9596
Diodes IncorporatedN CHANNEL MOSFET, 40V, 7A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:40V,On Resistance Rds(on):50mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:4Pins , RoHS Compliant: Yes2480
  • 1:$0.9790
  • 10:$0.8240
  • 25:$0.7500
  • 50:$0.7090
  • 100:$0.6620
ZXMN4A06GTA
DISTI # 70438833
Diodes IncorporatedMOSFET N-Channel 40V 7A SOT223
RoHS: Compliant
180
  • 25:$1.0400
  • 50:$0.9100
  • 100:$0.8100
  • 250:$0.7300
ZXMN4A06GTA
DISTI # 522-ZXMN4A06GTA
Diodes IncorporatedMOSFET 40V N-Chnl UMOS
RoHS: Compliant
8155
  • 1:$0.8300
  • 10:$0.6840
  • 100:$0.4410
  • 1000:$0.3530
ZXMN4A06GTADiodes IncorporatedSingle N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
RoHS: Compliant
3000Reel
  • 1000:$0.5100
ZXMN4A06GTA
DISTI # 7082585P
Zetex / Diodes IncMOSFET N-CHANNEL 40V 7A SOT223, RL1380
  • 25:£0.4940
  • 50:£0.4340
  • 250:£0.4180
  • 500:£0.4080
ZXMN4A06GTA
DISTI # 7082585
Zetex / Diodes IncMOSFET N-CHANNEL 40V 7A SOT223, PK125
  • 5:£0.6740
  • 25:£0.4940
  • 50:£0.4340
  • 250:£0.4180
  • 500:£0.4080
ZXMN4A06GTAZetex / Diodes IncPOWER FIELD-EFFECT TRANSISTOR, 5A I(D), 40V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET213
  • 112:$0.4485
  • 29:$0.5382
  • 1:$0.8970
ZXMN4A06GTA
DISTI # ZXMN4A06GTA
Diodes IncorporatedTransistor: N-MOSFET,unipolar,40V,5.6A,2W,SOT2231000
  • 1:$0.7800
  • 5:$0.7100
  • 25:$0.6300
  • 100:$0.5700
  • 500:$0.5200
ZXMN4A06GTA
DISTI # C1S205700138785
Diodes IncorporatedTrans MOSFET N-CH 40V 7A 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
500
  • 250:$0.5887
  • 100:$0.6321
  • 25:$0.6756
  • 10:$0.6758
ZXMN4A06GTA
DISTI # XSFP00000008664
Diodes IncorporatedPowerField-EffectTransistor,5AI(D),40V,0.05ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
47783
  • 1000:$1.0200
  • 47783:$0.9273
ZXMN4A06GTA
DISTI # 7564910
Diodes IncorporatedMOSFET, N, SOT-223
RoHS: Compliant
2480
  • 1:$1.3200
  • 10:$1.0900
  • 100:$0.8300
ZXMN4A06GTA
DISTI # 7564910
Diodes IncorporatedMOSFET, N, SOT-223
RoHS: Compliant
2829
  • 5:£0.6100
  • 25:£0.4560
  • 100:£0.4400
  • 250:£0.4240
  • 500:£0.4090
Bild Teil # Beschreibung
ZXMN4A06GTA

Mfr.#: ZXMN4A06GTA

OMO.#: OMO-ZXMN4A06GTA

MOSFET 40V N-Chnl UMOS
ZXMN4A06KTC

Mfr.#: ZXMN4A06KTC

OMO.#: OMO-ZXMN4A06KTC

MOSFET 40V 10.9A N-CHANNEL MOSFET
ZXMN4A06G

Mfr.#: ZXMN4A06G

OMO.#: OMO-ZXMN4A06G-1190

Neu und Original
ZXMN4A06GQ

Mfr.#: ZXMN4A06GQ

OMO.#: OMO-ZXMN4A06GQ-1190

Neu und Original
ZXMN4A06GQTA

Mfr.#: ZXMN4A06GQTA

OMO.#: OMO-ZXMN4A06GQTA-1190

MOSFET BVDSS: 31V40V SOT223 T&R 1K
ZXMN4A06GTA-CUT TAPE

Mfr.#: ZXMN4A06GTA-CUT TAPE

OMO.#: OMO-ZXMN4A06GTA-CUT-TAPE-1190

Neu und Original
ZXMN4A06KTC

Mfr.#: ZXMN4A06KTC

OMO.#: OMO-ZXMN4A06KTC-DIODES

IGBT Transistors MOSFET 40V 10.9A N-CHANNEL MOSFET
ZXMN4A06GTA

Mfr.#: ZXMN4A06GTA

OMO.#: OMO-ZXMN4A06GTA-DIODES

IGBT Transistors MOSFET 40V N-Chnl UMOS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von ZXMN4A06GTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,40 $
0,40 $
10
0,38 $
3,82 $
100
0,36 $
36,17 $
500
0,34 $
170,80 $
1000
0,32 $
321,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top