BSP318S E6327

BSP318S E6327
Mfr. #:
BSP318S E6327
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 60V 2.6A SOT-223
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSP318S E6327 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSP318S E6327 DatasheetBSP318S E6327 Datasheet (P4-P6)BSP318S E6327 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
SIPMOS
Verpackung
Band & Spule (TR)
Teilestatus
Obsolet
FET-Typ
N-Kanal
Technologie
MOSFET (Metalloxid)
Drain-Source-Spannung (Vdss)
60V
Strom - Dauerentnahme (Id) bei 25°C
2.6A (Ta)
Antriebsspannung (Max Rds Ein, Min Rds Ein)
4.5V, 10V
Vgs(th) (Max) @ ID
2V @ 20A
Gate-Ladung (Qg) (Max) @ Vgs
20nC @ 10V
Vgs (Max)
±20V
Eingangskapazität (Ciss) (Max) @ Vds
380pF @ 25V
FET-Funktion
-
Verlustleistung (max.)
1.8W (Ta)
Rds On (Max) @ ID, Vgs
90 mOhm @ 2.6A, 10V
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Gerätepaket des Lieferanten
PG-SOT223-4
Paket / Koffer
TO-261-4, TO-261AA
Tags
BSP318S, BSP318, BSP31, BSP3, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSP318S E6327
DISTI # BSP318SE6327-ND
Infineon Technologies AGMOSFET N-CH 60V 2.6A SOT-223
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSP318SE6327
    DISTI # 726-BSP318SE6327
    Infineon Technologies AGMOSFET N-Ch 60V 2.6A SOT-223-3
    RoHS: Not compliant
    0
      BSP318SE6327Infineon Technologies AG 2000
        BSP318SE6327Infineon Technologies AGPower Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Not Compliant
        43371
          Bild Teil # Beschreibung
          BSP318SH6327XTSA1

          Mfr.#: BSP318SH6327XTSA1

          OMO.#: OMO-BSP318SH6327XTSA1

          MOSFET N-Ch 60V 2.6A SOT-223-3
          BSP318

          Mfr.#: BSP318

          OMO.#: OMO-BSP318-1190

          Neu und Original
          BSP318 , TEA1795T/N1 , B

          Mfr.#: BSP318 , TEA1795T/N1 , B

          OMO.#: OMO-BSP318-TEA1795T-N1-B-1190

          Neu und Original
          BSP318S

          Mfr.#: BSP318S

          OMO.#: OMO-BSP318S-1190

          MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V,
          BSP318S E6327

          Mfr.#: BSP318S E6327

          OMO.#: OMO-BSP318S-E6327-INFINEON-TECHNOLOGIES

          MOSFET N-CH 60V 2.6A SOT-223
          BSP318S H6327

          Mfr.#: BSP318S H6327

          OMO.#: OMO-BSP318S-H6327-1190

          Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
          BSP318S L6327

          Mfr.#: BSP318S L6327

          OMO.#: OMO-BSP318S-L6327-1190

          MOSFET N-Ch 60V 2.6A SOT-223-3
          BSP318S-E6327

          Mfr.#: BSP318S-E6327

          OMO.#: OMO-BSP318S-E6327-1190

          INSTOCK
          BSP318SE6327

          Mfr.#: BSP318SE6327

          OMO.#: OMO-BSP318SE6327-1190

          MOSFET N-Ch 60V 2.6A SOT-223-3
          BSP318SL6327

          Mfr.#: BSP318SL6327

          OMO.#: OMO-BSP318SL6327-1190

          Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3000
          Menge eingeben:
          Der aktuelle Preis von BSP318S E6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,00 $
          0,00 $
          10
          0,00 $
          0,00 $
          100
          0,00 $
          0,00 $
          500
          0,00 $
          0,00 $
          1000
          0,00 $
          0,00 $
          Beginnen mit
          Neueste Produkte
          • M-SERIES D-Sub Connectors
            The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
          • TLV493D-A1B6 3D Magnetic Sensor
            Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
          • IR25750 Current Sensing IC
            IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
          • Compare BSP318S E6327
            BSP318S vs BSP318SE6327 vs BSP318SH6327
          • 600 V Trench Ultra-Fast IGBTs
            International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
          • DPS310 Digital Barometric Pressure Sensors
            Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.
          Top