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IRF6709S2TR1PBF

IRF6709S2TR1PBF
Mfr. #:
IRF6709S2TR1PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 25V 12A DIRECTFET-S1
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6709S2TR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRF670, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ied Electronics & Automation
MOSFET; 25V; 12.000A; DIRECTFET-LV
***i-Key
MOSFET N-CH 25V 12A DIRECTFET-S1
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; Termination Type:SMD; Alternate Case Style:DirectFET; Max Voltage Vgs th:2.35V; Min Voltage Vgs th:1.35V; Pulse Current Idm:100A; Transistor Case Style:S1
***ment14 APAC
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
Teil # Mfg. Beschreibung Aktie Preis
IRF6709S2TR1PBF
DISTI # IRF6709S2TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6709S2TR1PBF
    DISTI # IRF6709S2TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6709S2TR1PBF
      DISTI # IRF6709S2TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6709S2TR1PBF
        DISTI # 70019593        		Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET-LV
        RoHS: Compliant        		0
        • 1000:$1.0400
        • 2000:$1.0190
        • 5000:$0.9880
        • 10000:$0.9460
        • 25000:$0.8840
        IRF6709S2TR1PBF
        DISTI # 942-IRF6709S2TR1PBF        		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
        RoHS: Compliant        		0
          IRF6709S2TR1PBFInternational Rectifier 1000
            IRF6709S2TR1PBFInternational Rectifier 
            RoHS: Compliant            		1000
              IRF6709S2TR1PBF
              DISTI # 1688580              		Infineon Technologies AGMOSFET, N-CH, 25V, DIRECTFETS1
              RoHS: Compliant              		668
              • 1000:$1.4100
              • 250:$1.5900
              • 100:$1.7800
              • 25:$2.2000
              • 1:$2.6700
              IRF6709S2TR1PBF
              DISTI # 1688580              		Infineon Technologies AGMOSFET, N-CH, 25V, DIRECTFETS1
              RoHS: Compliant              		668
              • 500:£0.4580
              • 250:£0.4590
              • 100:£0.4600
              • 25:£0.5450
              • 5:£0.5950
              Bild Teil # Beschreibung
              IRF6709S2TRPBF

              Mfr.#: IRF6709S2TRPBF

              OMO.#: OMO-IRF6709S2TRPBF

              		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              IRF6709S2TR1PBF

              Mfr.#: IRF6709S2TR1PBF

              OMO.#: OMO-IRF6709S2TR1PBF

              		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              IRF6709S2TR1PBF

              Mfr.#: IRF6709S2TR1PBF

              OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES

              		 MOSFET N-CH 25V 12A DIRECTFET-S1
              IRF6709S2TRPBF

              Mfr.#: IRF6709S2TRPBF

              OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES

              		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              4500
              Menge eingeben:
              Der aktuelle Preis von IRF6709S2TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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